Characterization of refractive index change induced by electron irradiation in amorphous thin As{sub 2}S{sub 3} films
- Department of Physics, University of Joensuu, P. O. Box 111, FIN-80101 Joensuu (Finland)
- Optical Sciences Center, University of Arizona, Tucson, Arizona 85721 (United States)
Binary diffraction gratings in As{sub 2}S{sub 3} films were prepared with the aid of an electron beam. The dose of the electrons was varied. The gratings were read with a HeNe laser, and the zero-order and first-order diffraction efficiencies were noted. Rigorous diffraction theory was used to give a homogeneous approximation for the refractive index change. Reactive ion etching was applied to reduce the thickness of the film, and a new value for the refractive index change was evaluated. The refractive index change versus film thickness dependence was found to be linear at low electron doses and Gaussian shaped at higher doses. Through a simple mathematical analysis, the absolute value of the refractive index was determined as a function of the position inside the film. At higher doses, the refractive index change was found to have a maximum value of 3{percent}, approximately 1.2 {mu}m from the film surface. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 527967
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 82; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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