The stability improvement of a-Si:H films for photovoltaic applications

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:527736

Budaguan, B G; Aivazov, A A; Meytin, M N ^[1]

---

1. Moscow Inst. of Electronic Technology (Russian Federation). Dept. of Microtechnology

Amorphous hydrogenated silicon films are widely used in the fabrication of photosensitive devices such as photodetectors, sensors, and solar cells. The origin of metastability in a-Si:H films deposited at different deposition conditions has been investigated by joint analysis of light-induced defect generation kinetics (Staebler-Wronski Effect) and differential scanning calorimetry (DSC) measurements. Light-induced defect generation kinetics were measured at elevated temperatures of 80--150 C. DSC measurements were performed in a temperature range of 20 C--570 C. The films microstructure were studied by IR spectroscopy analysis. The simulation of DSC curves has been used to deduce the kinetics of the low-temperature exothermic peak (LTEP) observed at 80--150 C. It was found that kinetic parameters of LTEP and SW effects has the same dependence on microstructure parameters, {gamma}, which suggests their common nature. The analysis of a-Si:H stability improvement concerning the influence of films microstructure on the kinetics of relaxation processes is presented.

• OSTI ID: 527736
• Report Number(s): CONF-960401--; ISBN 1-55899-323-1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CALORIMETRY
CHEMICAL COMPOSITION
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
ILLUMINANCE
INFRARED SPECTRA
KINETICS
MICROSTRUCTURE
PHOTOVOLTAIC CELLS
POINT DEFECTS
SILICON