The stability improvement of a-Si:H films for photovoltaic applications
Book
·
OSTI ID:417653
- Moscow Inst. of Electronic Technology (Russian Federation). Dept. of Microtechnology
The origin of metastability in a-Si:H films deposited at different deposition conditions has been investigated by joint analysis of light-induced defect generation kinetics (Staebler-Wronski Effect) and differential scanning calorimetry (DSC) measurements. Light-induced defect generation kinetics were measured at elevated temperatures of 80--150 C. DSC measurements were performed in a temperature range of 20 C--570 C. The films microstructure were studied by IR spectroscopy analysis. The simulation of DSC curves has been used to deduce the kinetics of the low-temperature exothermic peak (LTEP) observed at 80--150 C. It was found that kinetic parameters of LTEP and SW effects has the same dependence on microstructure parameters, {gamma}, which suggests their common nature. The analysis of a-Si:H stability improvement concerning the influence of films microstructure on the kinetics of relaxation processes is presented.
- OSTI ID:
- 417653
- Report Number(s):
- CONF-960401--; ISBN 1-55899-329-0
- Country of Publication:
- United States
- Language:
- English
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