Photoconductivity of a-Si:H as a function of doping, temperature and photocarrier generation rates between 10{sup 13} and 10{sup 28}cm{sup {minus}3}s{sup {minus}1}
Book
·
OSTI ID:527720
- Univ. of Chicago, IL (United States). James Franck Inst.
- FORTH, Crete (Greece). Inst. of Electronic Structure and Laser
The steady state photoconductivity {sigma}{sub p} of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G = 5 {times} 10{sup 27}cm{sup {minus}3}s{sup {minus}1}. In the 20ppm B{sub 2}H{sub 6}/SiH{sub 4} p-type sample photoconduction switches from holes at low G to electrons at high G. The electron photoconduction at high G is increased by n-type and decreased by p-type doping. This is explained by the charge state of the dominant electron recombination centers. The {sigma}{sub p}(G) curves of doped and intrinsic a-Si:H merge at the highest G used.
- OSTI ID:
- 527720
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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