Transient photoconductivity of a-Si:H at low temperatures induced by bandgap light
Book
·
OSTI ID:527718
- Univ. of Chicago, IL (United States). James Franck Inst.
The rise and decay of the photoconductivity {sigma}{sub p} of intrinsic and strongly p-type hydrogenated amorphous silicon (a-Si:H) samples was studied as a function of photocarrier generation rate G between 4.2K and 300K. In intrinsic samples the temperature regime T<60K of energy-loss hopping is clearly distinguishable from T>80K where thermal re-excitation of photocarriers is possible. For the p-type sample the temperature dividing the two regimes is near 170K. In intrinsic samples the rise of {sigma}{sub p} is faster when residual photocarriers exist from previous light exposures than when the samples are in the electronic dark equilibrium. This indicates that geminate recombination decreases with increasing photocarrier concentration. In the p-type sample the authors observe an up to 20% overshoot in the rise of {sigma}{sub p} before {sigma}{sub p} settles down to its steady state value. This overshoot increases with G. The authors interpret the overshoot as an interplay of two recombination channels with different time scales.
- OSTI ID:
- 527718
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoconductivity of a-Si:H as a function of doping, temperature and photocarrier generation rates between 10{sup 13} and 10{sup 28}cm{sup {minus}3}s{sup {minus}1}
Comparison of experiment and theory of the photoconductivity of a-Si:H up to a generation rate of 10{sup 28}cm{sup -3}s{sup -1}
Temperature dependence of the photoconductivity and the near absence of light-induced defects in a-Si{sub x}Ge{sub 1-x}:H
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:527720
Comparison of experiment and theory of the photoconductivity of a-Si:H up to a generation rate of 10{sup 28}cm{sup -3}s{sup -1}
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:527714
Temperature dependence of the photoconductivity and the near absence of light-induced defects in a-Si{sub x}Ge{sub 1-x}:H
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:527687