Interdiffusion and carrier recombination in high intensity transient gratings

Book · Tue Dec 31 00:00:00 EST 1996

OSTI ID:527713

Schwarz, R; Grebner, S; Nebel, C E; Lanz, M; Stutzmann, M ^[1]

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1. Technical Univ. of Munich, Garching (Germany)

Transient grating (TG) experiments were performed to study carrier diffusion and recombination in amorphous silicon films (a-Si:H) at high light intensities using 8 ns pulses from a frequency-doubled Nd:YAG laser. The ambipolar diffusion coefficients reached about 10{sup {minus}2} cm{sup 2}/s, which is 2 orders of magnitude larger than the steady-state value. Similar results were obtained in intrinsic, p-, and n-doped a-Si:H films, indicating that the diffusion coefficients in all cases reflect the near band edge mobility of the slower carriers, that is holes. In particular, the p-type sample shows an initially fast, then a slow rating efficiency decay, consistent with dispersive transport.

• OSTI ID: 527713
• Report Number(s): CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%141
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
SILICON
THIN FILMS
CHARGE CARRIERS
DIFFUSION
RECOMBINATION
LIFETIME
CARRIER MOBILITY
CARRIER DENSITY
HOLE MOBILITY
EXPERIMENTAL DATA