Trap dominated hydrogen transport in disordered silicon
- Xerox Palo Alto Research Center, CA (United States)
Polycrystalline silicon (poly-Si) is receiving attention as an electronic material to replace hydrogenated amorphous silicon (a-Si:H) as active layer in device structures such as thin-film transistors and solar cells. Hydrogen transport in polycrystalline silicon was investigated by deuterium diffusion experiments. D was introduced either from a remote plasma or a solid-state source. The data can be explained by a two-level model used to explain diffusion in amorphous silicon. The energy difference between transport level and deuterium chemical potential was found to be 1.3 eV. A band of shallow levels for hydrogen trapping is located about 0.6 eV below the transport level, while deep levels are about 1.7 eV below.
- OSTI ID:
- 527682
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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