Inert gas dilution and ion bombardment effects in room temperature (35 C) plasma deposition of a-Si:H
Book
·
OSTI ID:527663
- North Carolina State Univ., Raleigh, NC (United States). Dept. of Chemical Engineering
Plasma enhanced chemical vapor deposition (PECVD) of a-Si:H with silane or silane and hydrogen at temperatures lower than 200 C commonly results in films with significant dihydride bonding and a high defect density. In this paper, the authors demonstrate the formation of monohydride dominant a-Si:H films using rf parallel plate PECVD at 35 C at deposition rates greater than 100 {angstrom}/min. In the as-deposited state, these films have low dark conductivity ({approximately}10{sup {minus}9}S/cm) and low photoconductivity. Annealing the films at 150 C caused the monohydride dominant films to show photo to dark conductivity ratio near 10{sup 5}. The results also indicate that an increase in monohydride fraction is not linked with a decrease in deposition rate.
- OSTI ID:
- 527663
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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