The influence of hydrogen dilution and substrate temperature in hot-wire deposition of amorphous and microcrystalline silicon with filament temperatures between 1900 and 2500 C

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:527656

Conde, J P; Brogueira, P ^[1]; Castanha, R; Chu, V ^[2]

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1. Instituto Superior Tecnico, Lisboa (Portugal). Dept. of Physics
2. Inst. de Engenharia de Sistemas e Computadores, Lisboa (Portugal)

The effect of hydrogen dilution and substrate temperature on the optoelectronic and structural properties of thin films deposited by hot-wire chemical vapor deposition with filament temperatures between 1,900 and 2,500 C from silane and hydrogen are studied. Amorphous silicon films are obtained at high deposition rates for hydrogen dilutions below 90%. The deposition rate scales approximately linearly with the filament temperature in this regime. Microcrystalline films are obtained for hydrogen dilution above 90%, independently of the filament temperature and substrate temperature, with much lower growth rates. The Raman spectrum of these films shows high crystalline fraction and small grain size. High conductivity films, typical of microcrystalline silicon, with high growth rates were achieved by either increasing the substrate temperature at low hydrogen dilution, or by using a hydrogen dilution just at the amorphous to microcrystalline transition point.

• OSTI ID: 527656
• Report Number(s): CONF-960401--; ISBN 1-55899-323-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
CRYSTALLIZATION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
MICROSTRUCTURE
RAMAN SPECTRA
SILANES
SILICON
TEMPERATURE DEPENDENCE
THIN FILMS