Effects of deposition power and temperature on the properties of heavily doped microcrystalline silicon films
- Univ. of Waterloo, Ontario (Canada). Dept. of Electrical and Computer Engineering
The authors studied the effect of RF deposition power and temperature on the electrical and structural properties of plasma enhanced chemical vapor deposited (PECVD), heavily doped microcrystalline silicon films (n{sup +}{micro}C-Si:H). The film growth process was found to be CVD-like at low powers and PVD-like (Physical Vapor Deposition) at high powers. The authors show that the film properties strongly depend on the nature of the growth process. They observed that at low temperatures the microcrystalline formation is mainly governed by the presence of hydrogen. This can be improved by increasing the substrate temperature. However, a further increase in substrate temperature tends to reduce hydrogen incorporation into the film and hence decreases the role of hydrogen in the formation of microcrystallites. Resistivities as low as 0.1 {Omega}.cm were achieved for 500 {angstrom} thin layers deposited at a relatively low temperature of 220 C and power density of 40mW/cm{sup 2}.
- Sponsoring Organization:
- Natural Sciences and Engineering Research Council of Canada, Ottawa, ON (Canada); Information Technology Research Centre, ON (Canada)
- OSTI ID:
- 527650
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Novel plasma control method in PECVD for preparing microcrystalline silicon
In-Situ Studies of the Growth of Amorphous and Microcrystalline Silicon Using Real-Time Spectroscopic Ellipsometry