Novel plasma control method in PECVD for preparing microcrystalline silicon
Conference
·
OSTI ID:20085511
A novel plasma enhanced vapor deposition (PECVD) technique employing biased wall (BW) method has been developed for the enhanced growth rate of the hydrogenated microcrystalline silicon ({micro}c-Si:H) films. Using this method, the authors have achieved a growth rate of more than 6{angstrom}/sec for the formation of {micro}c-Si:H having an average grain size of 200{angstrom} at 350 C.
- Research Organization:
- Thin Film Silicon Solar Cells Super Lab., Tsukuba, Ibaraki (JP)
- OSTI ID:
- 20085511
- Country of Publication:
- United States
- Language:
- English
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