Two-layer model for electroabsorption and built-in potential measurements on a-Si:H pin solar cells
Book
·
OSTI ID:527635
- Syracuse Univ., NY (United States). Dept. of Physics
Modulated Electroabsorption (EA) measurements have been widely used to estimate built-in potentials (V{sub bi}) in semiconductor devices. The method is particularly simple in devices for which the built-in potential is dropped in a single layer of the device. However, experimental results in amorphous silicon and organic devices can involve at least 2 layers. In the present paper the authors consider the information which can be obtained about 2-layer semiconductor devices from electroabsorption measurements. In particular they describe a 2-layer EA model appropriate to a-Si:H based pin solar cells, for which both the p{sup +} and i layers contribute to the EA signal. The authors present an analysis of capacitance and second harmonic measurements which yields the EA coefficient for the p{sup +} layer of the device, and they present measurements on a-Si:H pin devices which appear consistent with this analysis. Wavelength dependent EA then yields the built-in potential across the 2-layer device.
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States)
- OSTI ID:
- 527635
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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