Electroabsorption measurements and built-in potentials in amorphous silicon {ital p}{endash}{ital i}{endash}{ital n} solar cells
- Department of Physics, Syracuse University, Syracuse, New York 13244-1130 (United States)
- United Solar Systems Corporation, 1100 West Maple Road, Troy, Michigan 48084 (United States)
- Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084 (United States)
We present a technique for using modulated electroabsorption measurements to determine the built-in potential in semiconductor heterojunction devices. The technique exploits a simple relationship between the second-harmonic electroabsorption signal and the capacitance of such devices. We apply this technique to hydrogenated amorphous silicon ({ital a}-Si:H)-based solar cells incorporating microcrystalline Si {ital p}{sup +} layers. For one set of cells with a conventional plasma-deposited intrinsic ({ital i}) layer we obtain a built-in potential of 0.98{plus_minus}0.04 V; for cells with an {ital i} layer deposited using strong hydrogen dilution we obtain 1.25{plus_minus}0.04 V. We speculate that interface dipoles between the {ital p}{sup +} and {ital i} layers significantly influence the built-in potential. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 389242
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 69; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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