Light-induced degradation of amorphous silicon-germanium alloy solar cells deposited at high rates
- United Solar Systems Corp., Troy, MI (United States)
The authors have studied the light-induced degradation of amorphous silicon-germanium (a-SiGe:H) alloy single-junction solar cells with high initial performance deposited at high rates. The intrinsic layers were deposited using microwave (MW) glow-discharge technique at deposition rates between 10 and 40 {angstrom}/s. The results show that light-induced degradation of the cells is higher than that of cells deposited at low rates using RF glow-discharge technique, and it does not strongly depend on deposition rates over this range. The total hydrogen content and the ratio of Si-H{sub 2}, Ge-H, and Ge-H{sub 2} to Si-H bonding estimated by infrared (IR) absorption in films are correlated with the cell degradation results. The authors have also investigated the effect of ion-bombardment on film properties. Films with low ion-bombardment are more porous and have higher composition of Si-H{sub 2} and Ge-H{sub 2} bonding. Appropriate ion-bombardment makes denser structure in a-SiGe:H alloy films deposited at high rates. This improves the cell performance as well.
- OSTI ID:
- 527634
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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