Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Semiconductor laser array with single lobed output

Patent ·
OSTI ID:5276151

A semiconductor laser array is described comprising, semiconductor layers disposed over a substrate, at least one of the layers forming an active region for lightwave generation and propagation under lasing conditions, means for applying an electrical forward bias to the layers thereby generating lightwaves in the active region, means for guiding the lightwaves in spaced apart optical waveguides, the waveguides extending between reflective facets, and interconnecting waveguide means optically communicating between adjacent optical waveguides for coupling lightwaves propagating in each of the optical waveguides into adjacent optical waveguides. The adjacent spaced apart optical waveguides are characterized by separations between adjacent waveguides that at the light emitting facet are substantially unequal whereby light emitted from the optical waveguides at the light emitting facet has a single far field lobe radiating from the light emitting facet.

Assignee:
Spectra Diode Laboratories, Inc., San Jose, CA
Patent Number(s):
US 4718069
OSTI ID:
5276151
Country of Publication:
United States
Language:
English