a-Si:H solar cells deposited using VHF-PECVD
Book
·
OSTI ID:527610
- Univ. Utrecht (Netherlands)
a-Si:H p{sup +}-i-n{sup +} solar cells have been made employing plasma enhanced chemical vapor deposition at frequencies between 30--80 MHz. Here, only the i-layer was fabricated at these very high frequencies (VHF). Both the p{sup +}- and n{sup +}-layer were made using 13.56 MHz. A previous study has shown the material quality to depend on mainly the applied rf-power, and only slightly on the frequency. It should be noted that for homogeneity reasons a certain optimized pressure is required for each frequency. There is a clear correlation between material quality and solar cell parameters. An initial efficiency of 10% has been obtained for cells deposited at 65 MHz using a low power density, while the deposition rate still is 2--3 times higher than the one at 13.56 MHz. Light-soaking reveals stabilization at 6% for the best cell, which compares well to conventional 13.56 MHz cells.
- OSTI ID:
- 527610
- Report Number(s):
- CONF-960401--; ISBN 1-55899-323-1
- Country of Publication:
- United States
- Language:
- English
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