A Low Dark-Current, Planar InGaAs p-i-n Photodiode with a Quaternary InGaAsP Cap Layer
In /sub 0.53/ Ga /sub 0.47/ As p-i-n photodiodes have become the most suitable photodectectors for long wavelength (1-1.65 ..mu..) optical fiber communication systems due to thier low dark-currents. Further reduction of the dark-current to subnanoampere range will bring significant improvement in receiver sensitivity at low bit rates. In this paper, the authors report the successful fabrication of in /sub 0.53/ Ga /sub 0.47/ As p-i-n diodes with room temperature dark-currents as low as 0.1 nA at -10 V bias by introducing a quaternary InGaAsP cap layer on the ternary InGaAs. In this new structure the InGaAsP cap layer undergoes the surface treatment and faces the dielectric silicon nitride film, but the p-n junction is still located inside the InGaAs layer. since the addition of the wide bandgap cap layer results in low darkcurrent, the reduction of dark-current may be attributed to surface effects. Analysis of the temperature and voltage dependence of the dark-current indicates that at room temperature the ohmic conduction through the shunt formed on the surface limits the dark-current in this new diode structure.
- Research Organization:
- Collins Transmission Systems Division, Rockwell International Corporation, Dallas, TX 75207
- OSTI ID:
- 5271366
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Vol. QE-21:2
- Country of Publication:
- United States
- Language:
- English
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