Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature

Journal Article · Tue Jul 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119568· OSTI ID:526851

Sun, C; Chiu, T ^[1]; Keller, S; Wang, G; Minsky, M S; DenBaars, S P; Bowers, J E ^[2]

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1. Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan, Republic Of (China)
2. Department of Electrical and Computer Engineering and NSF Center for Quantized Electronic Structures, University of California, Santa Barbara, California 93106 (United States)

We present a room-temperature study of the well-width-dependent carrier lifetimes in InGaN single-quantum wells. At room temperature, carrier recombination was found to be dominated by interface-related nonradiative processes. The dominant radiative recombination at room temperature was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum well interface. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526851
• Journal Information: Applied Physics Letters, Vol. 71, Issue 4; Other Information: PBD: Jul 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM NITRIDES
PHOTOLUMINESCENCE
GALLIUM NITRIDES
INDIUM COMPOUNDS
GALLIUM COMPOUNDS
CARRIER LIFETIME
RECOMBINATION
HETEROJUNCTIONS
INTERFACES