{bold {ital In situ}} controlled fabrication of stacks of high-T{sub c} intrinsic Josephson junctions

Journal Article · Sat Mar 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119079· OSTI ID:526490

Yurgens, A; Winkler, D; Claeson, T ^[1]; Zavaritsky, N V ^[2]

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1. Department of Physics, Chalmers University of Technology, S-412 96 Goeteborg (Sweden)
2. P. L. Kapitza Institute for Physical Problems, Moscow 117334 (Russia)

Stacked series arrays of intrinsic Josephson (IJ) tunnel junctions have been fabricated on the surfaces of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystals using photolithography and Ar-ion milling together with {ital in situ} monitoring of the resulting current{endash}voltage (I{endash}V) characteristics. The number of unit-cell-sized junctions in the stack (along the c-axis) may be varied from 1{endash}5 to {approximately}200 in a controlled way. The c-axis resistivity {rho}{sub c}, estimated from the resistance of an individual tunnel junction is {approx}30 {Omega} cm at 90 K. The temperature dependence {rho}{sub c}(T){proportional_to}exp({Lambda}/T) with {Lambda}{approx}43 meV, suggesting thermally activated hopping mechanism of transport in the c-axis direction. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 526490
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 70; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
BISMUTH OXIDES
CALCIUM OXIDES
COPPER OXIDES
CRITICAL CURRENT
ELECTRIC CONDUCTIVITY
ETCHING
FABRICATION
HIGH-TC SUPERCONDUCTORS
JOSEPHSON EFFECT
JOSEPHSON JUNCTIONS
STRONTIUM OXIDES
SUPERLATTICES
TEMPERATURE DEPENDENCE
hopping conduction
photolithography