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Strong temperature dependence of the {ital c}-axis gap parameter of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} intrinsic Josephson junctions

Journal Article · · Physical Review, B: Condensed Matter
 [1];  [1];  [2];  [1]
  1. Department of Physics, Chalmers University of Technology, S-412 96, Goeteborg (Sweden)
  2. P. L. Kapitza Institute for Physical Problems, ul. Kosygina 2, Moscow, 117334 (Russia)
Stacked series arrays of intrinsic Josephson tunnel junctions have been fabricated on the surfaces of Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystals using photolithography and Ar-ion milling together with {ital in} {ital situ} monitoring of the resulting current-voltage ({ital I}-{ital V}) characteristics. The number of junctions in the stack (along the {ital c} axis) is varied from 1{endash}5 to {approximately}200 in a controlled way. Both Josephson coupling and multiple branches with well developed gap features are seen in the {ital I}-{ital V} dependences of the arrays at {ital T}{approx_lt}90 K. The gap parameter {Delta}{sub {ital c}} is 10{endash}13 meV at 4.2 K, which is approximately half the value reported in the literature. The temperature dependence of {Delta}{sub {ital c}} deviates strongly from the BCS one. Proximity induced superconductivity of the Bi-O layers may possibly explain both the reduced gap parameter and its temperature dependence. {copyright} {ital 1996 The American Physical Society.}
OSTI ID:
280217
Journal Information:
Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 14 Vol. 53; ISSN PRBMDO; ISSN 0163-1829
Country of Publication:
United States
Language:
English