Scanning tunneling microscopy observation of local damages induced on graphite surface by ion implantation

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585261· OSTI ID:5263845

Porte, L; deVilleneuve, C H; Phaner, M ^[1]

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1. Ecole Centrale de Lyon, Ecully (France)

This paper presents a STM study relative to the first step in the modification of a graphite surface on which argon ions of 50 keV kinetic energy have been implanted. Very low ion doses ({approximately} 10{sup 11} ions cm{sup {minus}2}) were used in order to isolate single-ion impacts and to characterize the damages due to one ion impact on the surface. Implantations were performed on highly oriented pyrolytic graphite (HOPG) whose lamellar structure allows easy cleavage and preparation of large flat terraces extending over hundreds of nanometers. Such flat standard surfaces are well suited to study the effects of ion bombardment.

• OSTI ID: 5263845
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARGON
CARBON
DAMAGE
ELEMENTAL MINERALS
ELEMENTS
ENERGY RANGE
FLUIDS
GASES
GRAPHITE
ION IMPLANTATION
KEV RANGE
KEV RANGE 10-100
MATHEMATICS
MICROSCOPY
MINERALS
NONMETALS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RARE GASES
TOPOLOGY
TUNNELING