Light induced degradation and structure of high efficiency a-Si:H, a-SiGe:H and a-SiC:H solar cells
The electrical and optical properties of a-Si:H, a-SiGe:H and a-SiC:H films prepared by d.c. glow discharge method have been characterized. High performance p-i-n devices have also been prepared. The relative stability as well as initial properties of these materials was examined as a function of growth rate. Notable solar cells include efficiencies of 9.36% for a-Si:H deposited at 10Asec, 8.6% for a-SiGe:H and 7% for a-SiC:H. Cells employing I-layers of a-Si:H grown at rates greater than 10Asec were significantly less stable than standard material. Cells using I-layers of either a-SiGe:H or a-SiC:H were stable (compared to standard a-Si:H) when they were prepared at growth rates of less than 1.0Asec. An increase in the infrared absorption at 845 cm/sup -1/ was associated with an increase in the rate of light induced degradation. Absorption at 845 cm/sup -1/, is usually associated with the bending modes of (SiH/sub 2/)/sub n/ polymeric chains
- Research Organization:
- Solarex Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940
- OSTI ID:
- 5255490
- Report Number(s):
- CONF-870116-
- Journal Information:
- AIP Conf. Proc.; (United States), Journal Name: AIP Conf. Proc.; (United States) Vol. 157:1; ISSN APCPC
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ENERGY GAP
ENERGY RANGE
EQUIPMENT
EV RANGE
EV RANGE 01-10
FILMS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
GLOW DISCHARGES
HYDROGENATION
OPTICAL PROPERTIES
PERFORMANCE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICIDES
SILICON CARBIDES
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS