Thermal stability of Si{sub 3}N{sub 4}/Si/GaAs interfaces
- Fredrick Seitz Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
- NASA Lewis Research Center, 21000 Brookpark Road, Cleveland, Ohio 44135 (United States)
An investigation on the thermally induced interface degradation of Si{sub 3}N{sub 4}/Si/p-GaAs metal{endash} insulator{endash}semiconductor (MIS) structures is presented. We characterize the mutation of chemical identities by {ital in situ} angle-resolved x-ray photoelectron spectroscopy and the nature of an insulator and interface by a variable angle spectroscopic ellipsometry after high temperature annealing. The minimum interface state density of the Si{sub 3}N{sub 4}/Si/p-GaAs MIS capacitor as determined by capacitance{endash}voltage and conductance loss measurements was about 8{times}10{sup 10} eV{sup {minus}1} cm{sup {minus}2} near GaAs midgap after rapid thermal annealing at 550{degree}C in N{sub 2}. However, this density increased to 5{times}10{sup 11} eV{sup {minus}1} cm{sup {minus}2} after annealing at 750{degree}C in N{sub 2}. The underlying mechanisms responsible for this degradation are described. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 524912
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 10; Other Information: PBD: Mar 1997
- Country of Publication:
- United States
- Language:
- English
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