Characteristics of Si{sub 3}N{sub 4}/Si/{ital n}-GaAs metal-insulator-semiconductor interfaces grown on GaAs(111)B substrate
- Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)
Interfacial properties of Al/Si{sub 3}N{sub 4}/Si/{ital n}-GaAs metal-insulator-semiconductor (MIS) capacitors grown on GaAs(111)B prepared with a combination of {ital in} {ital situ} molecular beam epitaxy and chemical vapor deposition techniques are presented. The density of the surface states in the high 10{sup 10} eV{sup {minus}1}cm{sup {minus}2} near the GaAs midgap for the GaAs grown at 575 and 625{degree}C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625{degree}C, showing smoother surface morphology than the surface grown at 575{degree}C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K requires that the traps be within 60 meV of the conduction band edge of GaAs and confirms the unpinned GaAs surface Fermi energy within GaAs band gap. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- University of Illinois
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 392051
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 69; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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