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Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

Journal Article · · Journal of Materials Research; (United States)
;  [1]
  1. Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York (USA)
Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPr{sup i}){sub 4}, and {ital in} {ital situ} characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO{sub 2} films. Si--O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.
DOE Contract Number:
FG02-87ER45303
OSTI ID:
5237988
Journal Information:
Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 6:9; ISSN JMREE; ISSN 0884-2914
Country of Publication:
United States
Language:
English