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U.S. Department of Energy
Office of Scientific and Technical Information

Light-trapping concentrator cells

Technical Report ·
DOI:https://doi.org/10.2172/5231774· OSTI ID:5231774
The objective of this project was to develop a thin, light-trapping silicon concentrator solar cell using a new structure, the cross-grooved cell. A process was developed for fabricating V-grooves on both sides of thin silicon wafers, the grooves on one side being perpendicular to those on the other side. A novel way of minimizing flat spots at the tops of the V-grooves was discovered. We experimentally verified the theoretical light-trapping superiority of the cross-grooved structure. We also demonstrated a reduction in grid line obscuration for grid lines running parallel to the V-grooves due to light reflection into the cell. high short-circuit current densities were achieved for p-i-n concentrator cells with the cross-grooved structure, proving the concept. The best efficiencies achieved were 18% at concentration, compared to 20% for a conventional planar low-resistivity cell. Recombination in the full-area emitter was identified as the major intrinsic loss mechanism in these thin, high-resistivity bifacial cells. Recombination on the emitter limits Voc and fill factor, and also leads to a large sublinearity of short-circuit current with light intensity. Reduction of the junction area is a major recommendation for future work. In addition, there were persistent problems with ohmic contacts and maintaining high minority-carrier lifetime during processing. We believe that these problems can be solved, and that the cross-grooved cell is a viable approach to the limit-efficiency silicon solar cell. This report covers research conducted between March 1987 and July 1989. 22 refs., 40 figs., 24 tabs.
Research Organization:
Sandia National Labs., Albuquerque, NM (USA); Spire Corp., Bedford, MA (USA)
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5231774
Report Number(s):
SAND-89-7092; ON: DE90004988
Country of Publication:
United States
Language:
English