Surface morphology of erbium silicide
The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.
- Research Organization:
- University of California, San Diego, Department of Electrical Engineering and Computer Sciences, La Jolla, California 92093
- OSTI ID:
- 5227064
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
CHEMICAL REACTIONS
DATA
DIMENSIONS
ELECTRICAL PROPERTIES
ELEMENTS
ERBIUM COMPOUNDS
ERBIUM SILICIDES
EXPERIMENTAL DATA
FILMS
INFORMATION
INTERFACES
LAYERS
MATERIALS
METALS
MORPHOLOGY
N-TYPE CONDUCTORS
NUMERICAL DATA
PHYSICAL PROPERTIES
RARE EARTH COMPOUNDS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SUBSTRATES
SURFACE PROPERTIES
THICKNESS
ULTRAHIGH VACUUM