Epitaxial formation of rare earth silicides by rapid annealing
Conference
·
OSTI ID:6216966
Rapid electron beam and lamp heating have been used to form thin epitaxial films of rare-earth silicides by reacting overlayers of the rare earths with (111) Si substrates. Of the metals Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, all but Gd are found to form epitaxial silicide layers by rapid solid-phase reaction, while silicides of Gd, Dy, Tm, Yb and Lu have been formed epitaxially by liquid phase reaction. For all but Er this is the first demonstration of epitaxial growth on Si. Details obtained from ion beam channeling analysis and transmission electron microscopy confirm the expected epitaxial structure and also show that the Si vacancies in the silicide form an ordered superlattice, rather than a random array as had been assumed before.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6216966
- Report Number(s):
- SAND-85-1333C; CONF-851217-6; ON: DE86003568
- Country of Publication:
- United States
- Language:
- English
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