Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2. 2. mu. m prepared by molecular beam epitaxy

Journal Article · Mon Oct 27 00:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97471· OSTI ID:5226585

Chiu, T H; Tsang, W T; Ditzenberger, J A; van der Ziel, J P

In/sub 0.16/Ga/sub 0.84/As/sub 0.15/Sb/sub 0.85//Al/sub 0.35/Ga/sub 0.65/Sb double heterostructure injection lasers have been grown by molecular beam epitaxy on (100) GaSb substrates. Room-temperature operation near 2.2 ..mu..m wavelength has been achieved under pulsed conditions. Low pulsed threshold current density of 4.2 kA/cm/sup 2/ and a characteristic temperature of T/sub 0/--26 K have been obtained.

• Research Organization: ATandT Bell Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5226585
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 49:17
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
ANTIMONY COMPOUNDS
CURRENT DENSITY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
INFRARED RADIATION
MOLECULAR BEAM EPITAXY
THRESHOLD CURRENT
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)