Surface layers of group-IVA metals with implanted silicon ions

Journal Article · Sun Nov 01 04:00:00 EST 1987 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:5222649

Kovneristyi, Yu K; Vavilova, V V; Krasnopevtsev, V V; Galkin, L N; Kudyshev, A N; Klechkovskaya, V V

The implantation of Si/sup +/ ions with an energy of 30 or 16 keV into Ti, Zr, or Hf at room temperature causes amorphization of the surface layer of the metal. During annealing at 870 K the amorphous layer of hafnium and titanium with implanted Si atoms is transformed into an amorphous HfO/sub 2m/ or TiO/sub 2/ solid solution with Si as a result of reaction with the oxygen in the residual atmosphere and this solid solution prevents further oxidation of the metal; the layer of amorphous alloy is thermally stable up to 1270 K. When Zr with implanted Si ions is annealed at a temperature no higher than 870 K the surface amorphous layer is oxidized in the residual atmosphere of oxygen and is crystallized as ZrO/sub 2/. Similar phenomena are observed in the case of hafnium, which has been implanted with oxygen ions or a small dose of silicon ions. The thermal stability of amorphous layers obtained through Si ion implantation into Ti, Zr, of Hf is consistent with the scale resistance of monolithic alloys in the Ti-Si, Zr-Si, and Hf-Si systems

• Research Organization: A. A. Baikov Institute of Metallurgy (USSR)
• OSTI ID: 5222649
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:6; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
AMORPHOUS STATE
ANNEALING
CHALCOGENIDES
CRYSTAL-PHASE TRANSFORMATIONS
CRYSTALLIZATION
DISPERSIONS
ELEMENTS
ENERGY RANGE
HAFNIUM
HAFNIUM COMPOUNDS
HAFNIUM OXIDES
HEAT TREATMENTS
ION IMPLANTATION
KEV RANGE
KEV RANGE 10-100
METALLURGICAL EFFECTS
METALS
MIXTURES
NONMETALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICON
SOLID SOLUTIONS
SOLUTIONS
TEMPERATURE EFFECTS
TITANIUM
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
ZIRCONIUM
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES