Detection and mobility of hafnium in SiO{sub 2}

Journal Article · Mon Jul 24 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2240743· OSTI ID:20860595

Klenov, Dmitri O; Mates, Thomas E; Stemmer, Susanne ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

High-angle annular dark-field imaging in scanning transmission electron microscopy and x-ray photoelectron spectroscopy were used to investigate thermal SiO{sub 2} layers doped with Hf by ion implantation. Hf was mobile under the focused electron beam in the as-implanted samples. After annealing for 5 min at 1200 deg. C, clusters of crystalline HfO{sub 2} were observed that were a few nanometers in size and surrounded by residual Hf that had remained trapped in the SiO{sub 2}. Hf was not mobile under the electron beam in the annealed samples. Further annealing caused an expansion of the SiO{sub 2} that was damaged by ion implantation. Hf rearrangement was confined to the ion beam damaged regions of the SiO{sub 2} layer. No diffusion of Hf into the undamaged SiO{sub 2} was observed. The implications of the results for complementary metal-oxide-semiconductor transistors with HfO{sub 2} gate dielectrics are discussed.

• OSTI ID: 20860595
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DIELECTRIC MATERIALS
DOPED MATERIALS
ELECTRON BEAMS
HAFNIUM
HAFNIUM OXIDES
INTEGRATED CIRCUITS
ION BEAMS
ION IMPLANTATION
ION MOBILITY
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TIME DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY PHOTOELECTRON SPECTROSCOPY