First-principle simulation of scanning tunneling microscopy/spectroscopy with cluster models of W, Pt, TiC, and impurity adsorbed tips

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585592· OSTI ID:5221570

Isshiki, Nobuyuki ^[1]; Kobaryashi, Katsuyoshi; Tsukada, Masaru ^[2]

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1. Kao Corp., Tokyo (Japan)
2. Univ. of Tokyo (Japan)

Tunneling current and conductance in scanning tunneling microscopy/spectroscopy (STM/STS) and calculated for various kind of tips using first-principle local density approximation (LDA) method with the tunneling-Hamiltonian formalism. As models of tip, tungsten cluster, platinum cluster, carbon adsorbed tungsten cluster, and titanium carbide cluster are used. Graphite surface is used for the simulation. STM image and qualitative feature of STS spectrum mainly depend on the arrangement of atoms at the tip apex and not so much affected by the atomic compositions of the tip because the most of tunneling current comes from a single or a few atom at the tip apex.

• OSTI ID: 5221570
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
ELECTRON MICROSCOPY
COMPUTERIZED SIMULATION
MICROSCOPES
DESIGN
ADSORPTION
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRONIC STRUCTURE
PLATINUM
SPECTROSCOPY
TITANIUM CARBIDES
TUNGSTEN
TUNNEL EFFECT
CARBIDES
CARBON COMPOUNDS
CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
METALS
MICROSCOPY
PHYSICAL PROPERTIES
PLATINUM METALS
SIMULATION
SORPTION
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
440800* - Miscellaneous Instrumentation- (1990-)