Shallow donors and D-X centers neutralization by atomic hydrogen in GaAlAs doped with silicon

Journal Article · Fri Jul 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.341464· OSTI ID:5219947

Mostefaoui, R; Chevallier, J; Jalil, A; Pesant, J C; Tu, C W; Kopf, R F

Hydrogen plasma exposure of silicon-doped Ga/sub 1/..sqrt../sub x/Al/sub x/As epilayers with x<0.37 causes a strong reduction of the free-electron concentration in the layers. For x<0.29, this effect is accompanied by a simultaneous increase of the electron mobility. This is interpreted, as in GaAs, in terms of a neutralization of the active silicon donors by atomic hydrogen. The neutralization efficiency of the shallow donors increases as x increases. For xapprox. =0.25, the D-X centers are very efficiently neutralized by hydrogen and, as a consequence, the conductivity mechanisms after exposure are only governed by the remaining shallow donors. For 0.29<0.37, most of the D-X centers are neutralized, but the electron mobility after hydrogenation is reduced.

• Research Organization: Laboratoire de Physique des Solides, CNRS, 1, pl. A. Briand, F-92195 Meudon Principal Cedex, France
• OSTI ID: 5219947
• Journal Information: J. Appl. Phys.; (United States), Vol. 64:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL DOPING
ELECTRIC CONDUCTIVITY
GALLIUM ARSENIDES
HYDROGEN
DIFFUSION
CARRIER DENSITY
ELECTRON MOBILITY
EXPERIMENTAL DATA
LAYERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
PLASMA
VERY LOW TEMPERATURE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
MOBILITY
NONMETALS
NUMERICAL DATA
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PNICTIDES
360603* - Materials- Properties