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Title: Properties of shallow donors in ZnMgO epilayers grown by metal organic chemical vapor deposition

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4902007· OSTI ID:22402620
 [1]; ;  [2]
  1. Department of Science and Technology (ITN), Linköping University, SE-60174 Norrköping (Sweden)
  2. Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

High quality Zn{sub 1−x}Mg{sub x}O epilayers have been grown by means of metal organic chemical vapor deposition technique on top of ZnO templates. The grown samples were investigated by x-ray photoelectron spectroscopy and photoluminescence. The magnesium (Mg) concentration was varied between 0% and 3% in order to study the properties of shallow donors. The free and donor bound excitons could be observed simultaneously in our high quality Zn{sub 1−x}Mg{sub x}O epilayers in the photoluminescence spectra. The results indicate that both built-in strain and Mg-concentration influence the donor exciton binding energy. It clearly shows that the donor exciton binding energy decreases with increasing Mg-concentration and with increasing built-in strain. Furthermore, the results indicate that the donor bound exciton transition energy increases with decreasing strength of the built-in strain if the Mg-concentration is kept the same in the Zn{sub 1−x}Mg{sub x}O epilayers.

OSTI ID:
22402620
Journal Information:
Journal of Applied Physics, Vol. 116, Issue 18; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English