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Ordered-vacancy-compound semiconductors: Pseudocubic CdIn/sub 2/Se/sub 4/

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

Whereas substitutional adamantine compounds A/sub n/B/sub 4-n/C/sub 4/ (e.g., ABC/sub 2/ chalcopyrites for n = 2, or the AC and BC zinc-blende compounds for n = 4 and 0) have four metal atoms around each nonmetal atom and vice versa, ordered-vacancy compounds OVC's) AB/sub 2/C/sub 4/ have but three metal atoms (one A and two B's) around each nonmetal site (C) while the fourth (unoccupied) site forms an ordered array of vacancies. An example for OVC's is ''pseudocubic'' CdIn/sub 2/Se/sub 4/ which can be structurally derived from the layered alternate monolayer superlattice of CdSe and InSe (along the (001) direction) by removing half of the Cd atoms from each Cd plane. Such OVC's form a natural bridge between crystal and impurity physics. Much like the metal vacancy in II-VI compounds (e.g., CdSe), the vacancy in CdIn/sub 2/Se/sub 4/ has associated with it (nonmetal) ''dangling bonds'' and ''lone-pair'' electrons, which, however, form a dispersed band in the crystal. Using all-electron mixed-basis electronic-structure techniques, we study the properties of such an ordered array of vacancies in CdIn/sub 2/Se/sub 4/ vis-a$ga: -vis the experimental data

Research Organization:
Solar Energy Research Institute, Golden, Colorado 80401
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5219654
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 37:12; ISSN PRBMD
Country of Publication:
United States
Language:
English