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Ternary chalcogenide-based photoelectrochemical cells - 2. The n-CdIn/sub 2/Se/sub 4//aqueous polysulfide system

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2124193· OSTI ID:6741922

CdIn/sub 2/Se/sub 4/ is a cross-substitutional analogue of CdSe with an incomplete cation lattice. The n-CdIn/sub 2/Se/sub 4//aqueous polysulfide photoelectrochemical cell is investigated. A selective photoelectrochemical etching of the semiconductor surface leads to a dramatic increase in the photocurrent of the cell (up to 15 mA*cm/sup -2/ at small reverse bias) and greatly improved output stability. The spectral response of the cell reveals a considerable sub-bandgap photocurrent for the etched electrode. This is attributed to excitation via surface states located approximately 0.27 eV within the bandgap. After photoetching the electrode, most of the sub-bandgap response disappears and the response to supra-bandgap excitation increases by at least an order of magnitude that shows that these surface states serve also as recombination centers or traps for the photogenerated holes. 25 refs.

Research Organization:
Weizmann Inst of Sci, Rehovot, Isr
OSTI ID:
6741922
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 129:7; ISSN JESOA
Country of Publication:
United States
Language:
English