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Grain boundary dissociation by the emission of stacking faults

Technical Report ·
DOI:https://doi.org/10.2172/521631· OSTI ID:521631
;  [1];  [2]
  1. Northwestern Univ., Evanston, IL (United States)
  2. Argonne National Lab., IL (United States). Materials Science Div.

A range of <110> symmetric tilt grain boundaries (GBs) are investigated in several fcc metals with simulations and high resolution electron microscopy. Boundaries with tilt angles between 50.5{degree} and 109.5{degree} dissociate into two boundaries 0.6 to 1.1 nm apart. The dissociation takes place by the emission of stacking faults from one boundary that are terminated by Shockley partials at a second boundary. This is a general mode of GB relaxation for low stacking fault energy metals. The reasons for the occurrence of this relaxation mode are discussed using the theory of GB dislocations.

Research Organization:
Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering; Argonne National Lab., IL (United States)
Sponsoring Organization:
USDOE Office of Energy Research, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
DOE Contract Number:
FG02-89ER45403; W-31109-ENG-38
OSTI ID:
521631
Report Number(s):
ANL/ER/PP--86722; ON: DE97008531; CNN: NSF award number DMR-9120521
Country of Publication:
United States
Language:
English

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