Growth of epitaxical SiC layers onto on- and off-axis 6H-SiC substrates by ion beam deposition
Thin films of {beta}-SiC have been grown epitaxically onto on-axis (0001) 6H {alpha}-SiC substrates using ion beam deposition. The ion beam deposition technique involves the direct deposition of alternating layers of {sup 13}C{sup +} and {sup 30}Si{sup +}. The carbon and silicon ions were obtained from an ion implanter by decelerating mass-analyzed ion beams to 40 eV. The SiC substrate was held at {approximately}973 K. Thin films of {alpha}-SiC (a mixture of {alpha}-polytypes) were obtained following deposition onto off-axis ({approximately}2{degree}) 6H {alpha}-SiC. High resolution electron microscopy and Rutherford backscattering techniques were used to determine the structure and crystalline perfection of the resulting layers.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- Sponsoring Organization:
- DOE/CE; DOE/ER
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5213718
- Report Number(s):
- CONF-891119-39; ON: DE90004236
- Resource Relation:
- Conference: Materials Research Society fall meeting, Boston, MA (USA), 27 Nov - 2 Dec 1989
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ION BEAMS
DEPOSITION
SILICON CARBIDES
LAYERS
SEMICONDUCTOR DEVICES
SUBSTRATES
THIN FILMS
BEAMS
CARBIDES
CARBON COMPOUNDS
FILMS
SILICON COMPOUNDS
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656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)