Material growth and characterization for solid state devices. Final report, 1 December 1983-31 May 1988

Technical Report · Fri Jan 01 04:00:00 EST 1988

OSTI ID:5211789

Collis, W J; Abul-Fadl, A; Iyer, S

During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.

• Research Organization: North Carolina Agricultural and Technical State Univ., Greensboro, NC (USA)
• OSTI ID: 5211789
• Report Number(s): N-89-30096; NASA-CR--183196; NAS--1.26:183196
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CRYSTAL GROWTH
DOCUMENT TYPES
EPITAXY
ETCHING
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LIQUID PHASE EPITAXY
LUMINESCENCE
MANGANESE ADDITIONS
MANGANESE ALLOYS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
PROGRESS REPORT
QUARTZ
SILICON COMPOUNDS
SILICON OXIDES
SPUTTERING
SUBSTRATES
SURFACE FINISHING
THIN FILMS