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Title: Optical waveguide fabrication by stoichiometric implantation of Ti and O into LiNbO sub 3

Conference ·
OSTI ID:5211557
 [1];  [2]
  1. Oak Ridge National Lab., TN (USA)
  2. California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical Engineering

X-cut substrates of LiNbO{sub 3} have been implanted at 500{degree}C with Ti and O to doses of 2.5 and 7.5 {times} 10{sup 17} ions/cm{sup 2}, respectively. The high substrate temperature during implantation ensures dynamic recrystallization, preserving the crystallinity of the LiNbO{sub 3}. The stability of the stoichiometric implants is enhanced sufficiently that annealing at 1000{degree}C proceeds with no surface degradation of the substrate. Annealing under identical conditions without the O implant usually results in phase separation of an oxide at the surface, even when annealing is performed immediately following implantation. Samples implanted with Ti and O to preserve the stoichiometric metal:oxygen ratio of the substrate can be stored at room temperature for several months without phase separation. Planar optical waveguides have been produced by stoichiometric implantation followed by annealing in water-saturated oxygen for one hour at temperatures of 900 and 1000{degree}C. The sample annealed at 900{degree}C supported a single lossy mode, while the 1000{degree}C sample supported two propagating modes and one lossy mode at {lambda} = 0.6 {mu}m. 7 refs., 5 figs.

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC05-84OR21400
OSTI ID:
5211557
Report Number(s):
CONF-891119-45; ON: DE90004238
Resource Relation:
Conference: Materials Research Society fall meeting, Boston, MA (USA), 27 Nov - 2 Dec 1989
Country of Publication:
United States
Language:
English