Effect of post-deposition implantation and annealing on the properties of PECVD deposited silicon nitride films

Thesis/Dissertation · Fri Jan 01 04:00:00 EST 1988

OSTI ID:5210646

Shams, Q A

Recently it has been shown that memory-quality silicon nitride can be deposited using plasma enhanced chemical vapor deposition (PECVD). Nitrogen implantation and post-deposition annealing resulted in improved memory properties of MNOS devices. The primary objective of the work described here is the continuation of the above work. Silicon nitride films were deposited using argon as the carrier gas and evaluated in terms of memory performance as the charge-trapping layer in the metal-nitride-oxide-silicon (MNOS) capacitor structure. The bonding structure of PECVD silicon nitride was modified by annealing in different ambients at temperatures higher than the deposition temperature. Post-deposition ion implantation was used to introduce argon into the films in an attempt to influence the transfer, trapping, and emission of charge during write/erase exercising of the MNOS devices. Results show that the memory performance of PECVD silicon nitride is sensitive to the deposition parameters and post-deposition processing.

• Research Organization: Arkansas Univ., Fayetteville, AR (USA)
• OSTI ID: 5210646
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARGON IONS
CAPACITORS
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRICAL EQUIPMENT
EQUIPMENT
FILMS
HEAT TREATMENTS
ION IMPLANTATION
IONS
MEMORY DEVICES
NITRIDES
NITROGEN COMPOUNDS
PERFORMANCE
PNICTIDES
SILICON COMPOUNDS
SILICON NITRIDES
SURFACE COATING