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Dielectronic capture processes in the electron-impact ionization of Sc[sup 2+]

Journal Article · · Physical Review A; (United States)
;  [1];  [2];  [3]; ; ; ; ;  [4];  [5];  [6]
  1. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
  2. Department of Physics Applied Physics, University of Strathclyde, Glasgow G4 ONG (United Kingdom)
  3. Department of Physics, Rollins College, Winter Park, Florida 32749 (United States)
  4. Institut fur Kernphysik, Universitat Giessen, D-35392 Giessen (Germany)
  5. Institut fur Strahlenphysik, Universitat Stuttgart, D-70550 Stuttgart (Germany)
  6. Joint Institute for Laboratory Astrophysics, Boulder, Colorado 80309 (United States)
Theoretical and experimental results are presented for the electron-impact ionization of Sc[sup 2+] in the near-threshold energy region where strong resonance features due to dielectronic capture processes are found. The indirect ionization contributions are calculated in the close-coupling approximation. Both absolute and scan measurements for the ionization cross section are obtained in a crossed-beams experimental geometry. The overall agreement between theory and experiment is good, once a sufficient number of singly excited states are included in the close-coupling expansion. The additional states allow a proper theoretical determination of the decay pathways available to the resonances formed following dielectronic capture of the incident electron.
DOE Contract Number:
FG05-86ER53217; AC05-84OR21400; AI05-86ER53237
OSTI ID:
5189979
Journal Information:
Physical Review A; (United States), Journal Name: Physical Review A; (United States) Vol. 49:2; ISSN 1050-2947; ISSN PLRAAN
Country of Publication:
United States
Language:
English