Strong contributions of indirect processes to the electron-impact ionization cross section of Sc{sup +} ions

Journal Article · Fri Oct 01 04:00:00 EDT 2004 · Physical Review. A

DOI:https://doi.org/10.1103/PhysRevA.70.042717· OSTI ID:20646377

Jacobi, J; Knopp, H; Schippers, S; Mueller, A; Loch, S D; Witthoeft, M; Pindzola, M S; Ballance, C P ^[1]

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1. Institut fuer Atom- und Molekuelphysik, Justus-Liebig-Universitaet Giessen, D-35392 Giessen (Germany)

We present experimental measurements and theoretical calculations for the electron-impact single ionization cross section of Sc{sup +} ions covering an energy range from threshold to 1000 eV. An electron-ion crossed-beams setup was employed for the measurements of absolute cross sections as well as for a high-resolution energy scan to uncover fine details in the energy dependence of the cross section. Direct ionization is described by configuration-averaged distorted-wave theory and indirect ionization by R-matrix theory. Indirect processes contribute to the total ionization cross section by up to {approx}40%. This finding is related to the existence of strong 3p{yields}3d excitation channels in Sc{sup +}(3p{sup 6}3d4s). The shape of the related cross-section feature is reminiscent of the very strong 4d{yields}4f excitation, found in the ionization of xenon and its neighboring elements.

• OSTI ID: 20646377
• Journal Information: Physical Review. A, Journal Name: Physical Review. A Journal Issue: 4 Vol. 70; ISSN 1050-2947; ISSN PLRAAN
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
ALGEBRA
CATIONS
CROSS SECTIONS
DISTORTED WAVE THEORY
ELECTRON CORRELATION
ELECTRON-ATOM COLLISIONS
ELECTRONS
ENERGY DEPENDENCE
EV RANGE
EXCITATION
EXCITED STATES
IONIZATION
R MATRIX
RESOLUTION
SCANDIUM IONS