Kinetics and dynamics on Si(100)

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.585532· OSTI ID:5189306

Huang, Z H; Gryko, J; Allen, R E ^[1]

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1. Texas A and M Univ., College Station (United States)

The motion of Si atoms at a Si(100) surface on both short ({approximately} 1ps) and long ({approximately} 1s) time scales is the subject of this paper. It is found that silicon atoms in the surface layer can form dimers within a time of order 1 ps. An interesting switching between symmetric and asymmetric dimers is observed in some runs. In others, the coexistence of symmetric and asymmetric dimers is observed. On a long time scale, stochastic modeling is used to simulate adsorption, diffusion, and growth. While deposition of Si atoms continues on vicinal Si(100), there is a tendency toward a one-domain surface with double steps. When deposition is turned off, diffusion leads to a two-domain surface with single steps. These conclusions are consistent with recent scanning tunneling microscopy and reflection high-energy electron diffraction observations.

• OSTI ID: 5189306
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ADSORPTION
ATOM TRANSPORT
CRYSTAL GROWTH
DIFFUSION
DIMERS
DYNAMICS
ELEMENTS
EPITAXY
KINETICS
MATHEMATICAL MODELS
MECHANICS
MICROSCOPY
MOLECULAR BEAM EPITAXY
NEUTRAL-PARTICLE TRANSPORT
RADIATION TRANSPORT
SEMIMETALS
SILICON
SORPTION
SORPTIVE PROPERTIES
STOCHASTIC PROCESSES
SURFACE PROPERTIES
SYMMETRY
TIME DEPENDENCE