Cobalt disilicide buffer layer for YBCO film on silicon

Journal Article · Sat Feb 01 04:00:00 EST 1997 · Journal of Low Temperature Physics

DOI:https://doi.org/10.1007/BF02399649· OSTI ID:518318

Belousov, I; Rudenko, E ^[1]; Linzen, S; Seidel, P ^[2]

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1. Institute for Physic Metals, Kiev (Ukraine)
2. Friedrich-Schiller-Universitaet Jena (Germany); Friedrich-Shiller-Universitaet Jena (Germany)

The CoSi{sub 2} films were used as buffer layers of YBCO/CoSi{sub 2}/Si(100), YBCO/ZrO{sub 2}/CoSi{sub 2}/Si(100) and YBCO/CeO{sub 2}/YSZ/CoSi{sub 2}/epi-Si/Al{sub 2}O{sub 3} heterostructures in this work. Transition temperatures of YBCO films were obtained up to 86K for YBCO films deposited by laser ablation on the top of CeO{sub 2}/YSZ/CoSi{sub 2}/Si/Al{sub 2}O{sub 3} structure. Local nucleation on the crystal defects of silicon, the phenomenon of lateral directed growth (DLG) and agglomeration of CoSi{sub 2} phase are responsible for grain boundaries (GB) position in CoSi{sub 2} layer and its roughness. The roughness was decreased using an additional Zr film on the top structure.

• Sponsoring Organization: USDOE
• OSTI ID: 518318
• Report Number(s): CONF-9608190--; CNN: Contract 13 N6808
• Journal Information: Journal of Low Temperature Physics, Journal Name: Journal of Low Temperature Physics Journal Issue: 3-4 Vol. 106; ISSN JLTPAC; ISSN 0022-2291
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
COBALT SILICIDES
COPPER OXIDES
HIGH-TC SUPERCONDUCTORS
INTERFACES
PHYSICAL VAPOR DEPOSITION
SILICON
SUBSTRATES
SUPERCONDUCTING FILMS
YTTRIUM OXIDES