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Title: Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide

Abstract

Electron spin resonance methods have been used to measure the temperature dependence of the spin-lattice relaxation time T/sub 1/ of dangling bond electrons in hydrogenated amorphous silicon and silicon carbide samples prepared by radio frequency sputtering. The T/sub 1/ measurements were made by a combination of continuous-wave absorption mode saturation and periodic adiabatic passage methods over the temperature range 100--400 K, yielding T/sup -1//sub 1/proportionalT/sup 2/ behavior consistent with relaxation by two-level systems.

Authors:
; ;
Publication Date:
Research Org.:
Ames Laboratory, USDOE, and Department of Physics, Iowa State University, Ames, Iowa 50011
OSTI Identifier:
5174660
DOE Contract Number:  
W-7405-ENG-82
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 49:17
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; SILICON; ELECTRON SPIN RESONANCE; SPIN-LATTICE RELAXATION; SILICON CARBIDES; RELAXATION TIME; SPUTTERING; CARBIDES; CARBON COMPOUNDS; ELEMENTS; MAGNETIC RESONANCE; RELAXATION; RESONANCE; SEMIMETALS; SILICON COMPOUNDS; 640302* - Atomic, Molecular & Chemical Physics- Atomic & Molecular Properties & Theory

Citation Formats

Dey, S, Torgeson, D R, and Barnes, R G. Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide. United States: N. p., 1986. Web. doi:10.1063/1.97431.
Dey, S, Torgeson, D R, & Barnes, R G. Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide. United States. https://doi.org/10.1063/1.97431
Dey, S, Torgeson, D R, and Barnes, R G. Mon . "Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide". United States. https://doi.org/10.1063/1.97431.
@article{osti_5174660,
title = {Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide},
author = {Dey, S and Torgeson, D R and Barnes, R G},
abstractNote = {Electron spin resonance methods have been used to measure the temperature dependence of the spin-lattice relaxation time T/sub 1/ of dangling bond electrons in hydrogenated amorphous silicon and silicon carbide samples prepared by radio frequency sputtering. The T/sub 1/ measurements were made by a combination of continuous-wave absorption mode saturation and periodic adiabatic passage methods over the temperature range 100--400 K, yielding T/sup -1//sub 1/proportionalT/sup 2/ behavior consistent with relaxation by two-level systems.},
doi = {10.1063/1.97431},
url = {https://www.osti.gov/biblio/5174660}, journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 49:17,
place = {United States},
year = {1986},
month = {10}
}