Dangling bond electron spin-lattice relaxation in rf-sputtered hydrogenated amorphous silicon and silicon carbide

Journal Article · Mon Oct 27 00:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97431· OSTI ID:5174660

Dey, S; Torgeson, D R; Barnes, R G

Electron spin resonance methods have been used to measure the temperature dependence of the spin-lattice relaxation time T/sub 1/ of dangling bond electrons in hydrogenated amorphous silicon and silicon carbide samples prepared by radio frequency sputtering. The T/sub 1/ measurements were made by a combination of continuous-wave absorption mode saturation and periodic adiabatic passage methods over the temperature range 100--400 K, yielding T/sup -1//sub 1/proportionalT/sup 2/ behavior consistent with relaxation by two-level systems.

• Research Organization: Ames Laboratory, USDOE, and Department of Physics, Iowa State University, Ames, Iowa 50011
• DOE Contract Number: W-7405-ENG-82
• OSTI ID: 5174660
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 49:17
• Country of Publication: United States
• Language: English

Related Subjects

74 ATOMIC AND MOLECULAR PHYSICS
SILICON
ELECTRON SPIN RESONANCE
SPIN-LATTICE RELAXATION
SILICON CARBIDES
RELAXATION TIME
SPUTTERING
CARBIDES
CARBON COMPOUNDS
ELEMENTS
MAGNETIC RESONANCE
RELAXATION
RESONANCE
SEMIMETALS
SILICON COMPOUNDS
640302* - Atomic
Molecular & Chemical Physics- Atomic & Molecular Properties & Theory