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U.S. Department of Energy
Office of Scientific and Technical Information

Monolithic integration of semiconductor and superconductor components. Rept. for 1 Jan-31 Mar 92

Technical Report ·
OSTI ID:5167567
The goal of the program is to develop transistor technology compatible with high transition temperature superconductor technology so that transistor pixel switches can be integrated with YBa2Cu3O7 superconducting microbolometers in the same silicon substrate. A 4x4 matrix-addressable superconducting microbolometer array will be delivered at the completion of the program. The linear arrays of microbolometers produced in the Honeywell funded process run of December 1991 were evaluated under the present contract during January - March 1992. The results, summarized in this report, demonstrate that high - Tc superconductor microbolometers on silicon microstructures are extremely sensitive infrared detectors.
Research Organization:
Honeywell, Inc., Bloomington, MN (United States). Corporate Sensor and System Development Center
OSTI ID:
5167567
Report Number(s):
AD-A-248952/4/XAB; CNN: N00014-90-C-0226
Country of Publication:
United States
Language:
English