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Scanning tunneling microscopy study of TiO sub x on Rh(111)

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
OSTI ID:5163334
; ;  [1]
  1. Lawrence Berkeley Lab., CA (United States)

This paper describes how scanning tunneling microscopy has been used to study submonolayer coverages of titanium oxide on rhodium. After reduction with CO, titania is shown to form one atomic layer thick islands {approximately} 20 {angstrom} in size on the Rh(111) surface at submonolayer coverages. High resolution filled state images show enhanced contrast at the island perimeter. The ring shaped appearance of the islands is related to the electronic structure of the titania overlayer.

DOE Contract Number:
AC03-76SF00098
OSTI ID:
5163334
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 9:2; ISSN 0734-211X; ISSN JVTBD
Country of Publication:
United States
Language:
English