Applicability of equilibrium calculations to dichlorosilane CVD and HC1 etching processes used at the Center for Radiation-Hardened Microelectronics

Technical Report · Sun Jun 01 00:00:00 EDT 1986

OSTI ID:5161698

Ho, P; Medernach, J W

Equilibrium calculations were done for the Si-H-Cl system over a wide range of temperature, total pressure and gas mixtures. Comparisons were made between equilibrium silicon deposition/etch rates and experiments done in the epitaxial silicon reactor at the Center for Radiation-Hardened Microelectronics. The results indicate that equilibrium calculations could serve as a guide to process development for temperatures above approx.1000/sup 0/C, but that equilibrium is probably not applicable at lower temperatures. 52 refs., 20 figs., 13 tabs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5161698
• Report Number(s): SAND-86-2003; ON: DE86013243
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CHLORINE
DATA
DEPOSITION
ELECTRONIC CIRCUITS
ELEMENTS
EQUILIBRIUM
ETCHING
FILMS
HALOGENS
HYDROCHLORIC ACID
HYDROGEN
HYDROGEN COMPOUNDS
INFORMATION
INORGANIC ACIDS
MICROELECTRONIC CIRCUITS
NONMETALS
NUMERICAL DATA
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SURFACE COATING
SURFACE FINISHING
TEMPERATURE DEPENDENCE
THEORETICAL DATA
THERMODYNAMIC PROPERTIES
THIN FILMS