Future of plasma etching for microelectronics: Challenges and opportunities

Oehrlein, Gottlieb S.; Brandstadter, Stephan M.; Bruce, Robert L.; Chang, Jane P.; DeMott, Jessica C.; Donnelly, Vincent M.; Dussart, Rémi; Fischer, Andreas; Gottscho, Richard A.; Hamaguchi, Satoshi; Honda, Masanobu; Hori, Masaru; Ishikawa, Kenji; Jaloviar, Steven G.; Kanarik, Keren J.; Karahashi, Kazuhiro; Ko, Akiteru; Kothari, Hiten; Kuboi, Nobuyuki; Kushner, Mark J.; Lill, Thorsten; Luan, Pingshan; Mesbah, Ali; Miller, Eric; Nath, Shoubhanik; Ohya, Yoshinobu; Omura, Mitsuhiro; Park, Chanhoon; Poulose, John; Rauf, Shahid; Sekine, Makoto; Smith, Taylor G.; Stafford, Nathan; Standaert, Theo; Ventzek, Peter L. G.

doi:10.1116/6.0003579

Future of plasma etching for microelectronics: Challenges and opportunities

Journal Article · Fri Jun 07 00:00:00 EDT 2024 · Journal of Vacuum Science and Technology B

DOI:https://doi.org/10.1116/6.0003579· OSTI ID:2560935

; Brandstadter, Stephan M.; ; ; ; ; ; ; ; ; ; ; ; Jaloviar, Steven G.; ; ; ; Kothari, Hiten; ; more »

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

View Journal Article

Sponsoring Organization:: USDOE

Grant/Contract Number:: NONE; SC0001939

OSTI ID:: 2560935

Alternate ID(s):: OSTI ID: 2579966

Journal Information:: Journal of Vacuum Science and Technology B, Journal Name: Journal of Vacuum Science and Technology B Journal Issue: 4 Vol. 42; ISSN 2166-2746

Publisher:: American Vacuum SocietyCopyright Statement

Country of Publication:: United States

Language:: English

References (341)

Machine Learning Interatomic Potentials as Emerging Tools for Materials Science Deringer, Volker L.; Caro, Miguel A.; Csányi, Gábor Advanced Materials, Vol. 31, Issue 46 https://doi.org/10.1002/adma.201902765	journal	September 2019
Per‐ and Polyfluoroalkyl Substance Toxicity and Human Health Review: Current State of Knowledge and Strategies for Informing Future Research Fenton, Suzanne E.; Ducatman, Alan; Boobis, Alan Environmental Toxicology and Chemistry, Vol. 40, Issue 3 https://doi.org/10.1002/etc.4890	journal	December 2020
Perfluoroalkyl and polyfluoroalkyl substances in the environment: Terminology, classification, and origins Buck, Robert C.; Franklin, James; Berger, Urs Integrated Environmental Assessment and Management, Vol. 7, Issue 4 https://doi.org/10.1002/ieam.258	journal	September 2011
Multiscale Modeling of Low Pressure Plasma Etching Processes: Linking the Operating Parameters of the Plasma Reactor with Surface Roughness Evolution Mouchtouris, Sotiris; Kokkoris, George Plasma Processes and Polymers, Vol. 14, Issue 4-5 https://doi.org/10.1002/ppap.201600147	journal	October 2016
Novel Epitaxy for Nitride Semiconductors Using Plasma Technology Oda, Osamu; Hori, Masaru physica status solidi (a), Vol. 218, Issue 1 https://doi.org/10.1002/pssa.202000462	journal	November 2020
Global warming potentials and radiative efficiencies of halocarbons and related compounds: A comprehensive review: HALOCARBON REVIEW Hodnebrog, Ø.; Etminan, M.; Fuglestvedt, J. S. Reviews of Geophysics, Vol. 51, Issue 2 https://doi.org/10.1002/rog.20013	journal	April 2013
Energy Dependence of Ion-Induced Sputtering Yields from Monatomic Solids at Normal Incidence Yamamura, Yasunori; Tawara, Hiro Atomic Data and Nuclear Data Tables, Vol. 62, Issue 2 https://doi.org/10.1006/adnd.1996.0005	journal	March 1996
Laser-induced chemical etching of silicon in chlorine atmosphere Kullmer, R.; Bäuerle, D. Applied Physics A: Solids and Surface, Vol. 47, Issue 4 https://doi.org/10.1007/BF00615502	journal	December 1988
Wet chemical etching of silicate glasses in hydrofluoric acid based solutions Spierings, G. A. C. M. Journal of Materials Science, Vol. 28, Issue 23 https://doi.org/10.1007/BF01352182	journal	December 1993
Towards an integrated modeling of the plasma-solid interface Bonitz, Michael; Filinov, Alexey; Abraham, Jan-Willem Frontiers of Chemical Science and Engineering, Vol. 13, Issue 2 https://doi.org/10.1007/s11705-019-1793-4	journal	June 2019
Comparative study of global warming effects during silicon nitride etching using C3F6O/O2 and C3F6/O2 gas mixtures Kim, Ka Youn; Moon, Hock Key; Lee, Nae-Eung Electronic Materials Letters, Vol. 11, Issue 1 https://doi.org/10.1007/s13391-014-4080-z	journal	January 2015
Problems related to p-n junctions in silicon Shockley, William Solid-State Electronics, Vol. 2, Issue 1 https://doi.org/10.1016/0038-1101(61)90054-5	journal	January 1961
Energy dependence of the ion-induced sputtering yields of monatomic solids Matsunami, Noriaki; Yamamura, Yasunori; Itikawa, Yukikazu Atomic Data and Nuclear Data Tables, Vol. 31, Issue 1 https://doi.org/10.1016/0092-640X(84)90016-0	journal	July 1984
Low temperature etching of Si in high density plasma using SF6/O2 Bartha, Johann W.; Greschner, Johann; Puech, M. Microelectronic Engineering, Vol. 27, Issue 1-4 https://doi.org/10.1016/0167-9317(94)00144-J	journal	February 1995
Photochemical etching with tunable VUV radiation Streller, U.; Li, B.; Krabbe, A. Journal of Electron Spectroscopy and Related Phenomena, Vol. 80 https://doi.org/10.1016/0368-2048(96)02920-9	journal	May 1996
Fluorocarbons in the global environment: a review of the important interactions with atmospheric chemistry and physics McCulloch, Archie Journal of Fluorine Chemistry, Vol. 123, Issue 1 https://doi.org/10.1016/S0022-1139(03)00105-2	journal	September 2003
The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source Jansen, Henri; de Boer, Meint; Wensink, Henk Microelectronics Journal, Vol. 32, Issue 9 https://doi.org/10.1016/S0026-2692(01)00039-8	journal	September 2001
Multiscale modeling of plasma etch processing Sukharev, V. Vacuum, Vol. 65, Issue 3-4 https://doi.org/10.1016/S0042-207X(01)00432-8	journal	May 2002
From mine to refrigeration: a life cycle inventory analysis of the production of HFC-134a McCulloch, A.; Lindley, A. A. International Journal of Refrigeration, Vol. 26, Issue 8 https://doi.org/10.1016/S0140-7007(03)00095-1	journal	December 2003
Efficiencies above unity in light-induced reaction of Cu with Cl2: excitation, amplification, and diffusion processes Raaf, H.; Schwentner, N. Applied Surface Science, Vol. 174, Issue 1 https://doi.org/10.1016/S0169-4332(00)00892-8	journal	April 2001
Dielectric film etching in semiconductor device manufacturing Sekine, Makoto Applied Surface Science, Vol. 192, Issue 1-4 https://doi.org/10.1016/S0169-4332(02)00031-4	journal	May 2002
Materials processing by gas cluster ion beams Yamada, I. Materials Science and Engineering: R: Reports, Vol. 34, Issue 6 https://doi.org/10.1016/S0927-796X(01)00034-1	journal	October 2001
Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation Kim, Hee Ju; Wen, Long; Kim, Doo San Applied Surface Science, Vol. 596 https://doi.org/10.1016/j.apsusc.2022.153604	journal	September 2022
Surface hardening of extreme ultraviolet(EUV) photoresist by CS2 plasma for highly selective and low damage patterning Chang, Won Jun; Kim, Hee Ju; Yeom, Geun Young Applied Surface Science, Vol. 629 https://doi.org/10.1016/j.apsusc.2023.157439	journal	August 2023
Thermal atomic layer etching of CoO using acetylacetone and ozone: Evidence for changes in oxidation state and crystal structure during sequential exposures Partridge, Jonathan L.; Abdulagatov, Aziz I.; Sharma, Varun Applied Surface Science, Vol. 638 https://doi.org/10.1016/j.apsusc.2023.157923	journal	November 2023
Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomers Lee, Hye Joo; Tak, Hyun Woo; Kim, Seong Bae Applied Surface Science, Vol. 639 https://doi.org/10.1016/j.apsusc.2023.158190	journal	December 2023
Reaction science of layer-by-layer thinning of graphene with oxygen neutrals at room temperature Sugiura, Hirotsugu; Kondo, Hiroki; Higuchi, Kimitaka Carbon, Vol. 170 https://doi.org/10.1016/j.carbon.2020.07.052	journal	December 2020
Investigation of fluoride and silica removal from semiconductor wastewaters with a clean coagulation-ultrafiltration process Qiu, Yangbo; Ren, Long-Fei; Xia, Lei Chemical Engineering Journal, Vol. 438 https://doi.org/10.1016/j.cej.2022.135562	journal	June 2022
Assessment of removal efficiency of perfluorocompounds (PFCs) in a semiconductor fabrication plant by gas chromatography Ou Yang, Chang-Feng; Kam, Seak-Hong; Liu, Chia-Hung Chemosphere, Vol. 76, Issue 9 https://doi.org/10.1016/j.chemosphere.2009.06.039	journal	August 2009
Atmospheric chemistry of short-chain haloolefins: Photochemical ozone creation potentials (POCPs), global warming potentials (GWPs), and ozone depletion potentials (ODPs) Wallington, T. J.; Sulbaek Andersen, M. P.; Nielsen, O. J. Chemosphere, Vol. 129 https://doi.org/10.1016/j.chemosphere.2014.06.092	journal	June 2015
Comparison of different interatomic potentials for MD simulations of AlN Xiang, Henggao; Li, Haitao; Peng, Xianghe Computational Materials Science, Vol. 140 https://doi.org/10.1016/j.commatsci.2017.08.042	journal	December 2017
DeePMD-kit: A deep learning package for many-body potential energy representation and molecular dynamics Wang, Han; Zhang, Linfeng; Han, Jiequn Computer Physics Communications, Vol. 228 https://doi.org/10.1016/j.cpc.2018.03.016	journal	July 2018
Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment Cardinaud, Christophe Comptes Rendus. Chimie, Vol. 21, Issue 8 https://doi.org/10.1016/j.crci.2018.01.009	journal	March 2018
Air-source heat pump carbon footprints: HFC impacts and comparison to other heat sources Johnson, Eric P. Energy Policy, Vol. 39, Issue 3 https://doi.org/10.1016/j.enpol.2010.12.009	journal	March 2011
Drawing a chip environmental profile: environmental indicators for the semiconductor industry Villard, Aurélie; Lelah, Alan; Brissaud, Daniel Journal of Cleaner Production, Vol. 86 https://doi.org/10.1016/j.jclepro.2014.08.061	journal	January 2015
A review of semiconductor wastewater treatment processes: Current status, challenges, and future trends Sim, Jeonghoo; Lee, Jonghun; Rho, Hojung Journal of Cleaner Production, Vol. 429 https://doi.org/10.1016/j.jclepro.2023.139570	journal	December 2023
Catalysts for modern fluorinated refrigerants Bellabarba, Ronan M. Journal of Fluorine Chemistry, Vol. 244 https://doi.org/10.1016/j.jfluchem.2021.109741	journal	April 2021
Effects of atomic layer etching on magnetic properties of CoFeB films: Reduction of Gilbert damping Konh, Mahsa; Wang, Yang; Pina, Marissa Journal of Magnetism and Magnetic Materials, Vol. 564 https://doi.org/10.1016/j.jmmm.2022.170052	journal	December 2022
Coupled precipitation-ultrafiltration for treatment of high fluoride-content wastewater Liu, Ching-Chung; Liu, J. C. Journal of the Taiwan Institute of Chemical Engineers, Vol. 58 https://doi.org/10.1016/j.jtice.2015.05.038	journal	January 2016
The passivation layer formation in the cryo-etching plasma process Dussart, R.; Mellhaoui, X.; Tillocher, T. Microelectronic Engineering, Vol. 84, Issue 5-8 https://doi.org/10.1016/j.mee.2007.01.048	journal	May 2007
Molybdenum nanopillar arrays: Fabrication and engineering Maduro, Louis; de Boer, Charles; Zuiddam, Marc Physica E: Low-dimensional Systems and Nanostructures, Vol. 134 https://doi.org/10.1016/j.physe.2021.114903	journal	October 2021
Production of HF from H2SiF6 Dahlke, Thomas; Ruffiner, Olivier; Cant, Roderick Procedia Engineering, Vol. 138 https://doi.org/10.1016/j.proeng.2016.02.080	journal	January 2016
Climate change and industrial F-gases: A critical and systematic review of developments, sociotechnical systems and policy options for reducing synthetic greenhouse gas emissions Sovacool, Benjamin K.; Griffiths, Steve; Kim, Jinsoo Renewable and Sustainable Energy Reviews, Vol. 141 https://doi.org/10.1016/j.rser.2021.110759	journal	May 2021
Removal of fluoride from industrial wastewater by using different adsorbents: A review Wan, Kuilin; Huang, Lei; Yan, Jia Science of The Total Environment, Vol. 773 https://doi.org/10.1016/j.scitotenv.2021.145535	journal	June 2021
The chip manufacturing industry: Environmental impacts and eco-efficiency analysis Ruberti, Marcello Science of The Total Environment, Vol. 858 https://doi.org/10.1016/j.scitotenv.2022.159873	journal	February 2023
Molecular dynamics simulation of Si and SiO2 reactive ion etching by fluorine-rich ion species Capdos Tinacba, Erin Joy; Isobe, Michiro; Karahashi, Kazuhiro Surface and Coatings Technology, Vol. 380 https://doi.org/10.1016/j.surfcoat.2019.125032	journal	December 2019
Effects of deposition precursors of hydrogenated amorphous carbon films on the plasma etching resistance based on mass spectrometer measurements and machine learning analysis Kurokawa, Jumpei; Kondo, Hiroki; Tsutsumi, Takayoshi Vacuum, Vol. 205 https://doi.org/10.1016/j.vacuum.2022.111351	journal	November 2022
Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma Hsiao, Shih-Nan; Britun, Nikolay; Nguyen, Thi-Thuy-Nga Vacuum, Vol. 210 https://doi.org/10.1016/j.vacuum.2023.111863	journal	April 2023
Textured p-type crystalline silicon surfaces obtained by multi-step plasma process for SHJ solar cells Addonizio, M. L.; Antonaia, A. Vacuum, Vol. 215 https://doi.org/10.1016/j.vacuum.2023.112284	journal	September 2023
Mechanisms of Thermal Atomic Layer Etching George, Steven M. Accounts of Chemical Research, Vol. 53, Issue 6 https://doi.org/10.1021/acs.accounts.0c00084	journal	June 2020
Thermodynamics of Atomic Layer Etching Chemistry on Copper and Nickel Surfaces from First Principles Xia, Yantao; Sautet, Philippe Chemistry of Materials, Vol. 33, Issue 17 https://doi.org/10.1021/acs.chemmater.1c01324	journal	August 2021
Thermal Atomic Layer Etching of Nickel Using Sequential Chlorination and Ligand-Addition Reactions Murdzek, Jessica A.; Lii-Rosales, Ann; George, Steven M. Chemistry of Materials, Vol. 33, Issue 23 https://doi.org/10.1021/acs.chemmater.1c02684	journal	December 2021
Thermal Atomic Layer Etching of CoO, ZnO, Fe₂O₃, and NiO by Chlorination and Ligand Addition Using SO₂Cl₂ and Tetramethylethylenediamine Partridge, Jonathan L.; Murdzek, Jessica A.; Johnson, Virginia L. Chemistry of Materials, Vol. 35, Issue 5 https://doi.org/10.1021/acs.chemmater.2c03616	journal	February 2023
Mechanism of Thermal Al ₂ O ₃ Atomic Layer Etching Using Sequential Reactions with Sn(acac) ₂ and HF Lee, Younghee; DuMont, Jaime W.; George, Steven M. Chemistry of Materials, Vol. 27, Issue 10 https://doi.org/10.1021/acs.chemmater.5b00300	journal	May 2015
Coarse-Grained Protein Models and Their Applications Kmiecik, Sebastian; Gront, Dominik; Kolinski, Michal Chemical Reviews, Vol. 116, Issue 14 https://doi.org/10.1021/acs.chemrev.6b00163	journal	June 2016
Fluorocarbon Refrigerants and their Syntheses: Past to Present Sicard, Alexandre J.; Baker, R. Tom Chemical Reviews, Vol. 120, Issue 17 https://doi.org/10.1021/acs.chemrev.9b00719	journal	August 2020
Machine Learning Force Fields and Coarse-Grained Variables in Molecular Dynamics: Application to Materials and Biological Systems Gkeka, Paraskevi; Stoltz, Gabriel; Barati Farimani, Amir Journal of Chemical Theory and Computation, Vol. 16, Issue 8 https://doi.org/10.1021/acs.jctc.0c00355	journal	June 2020
Coarse-Grained Modeling Using Neural Networks Trained on Structural Data Ivanov, Mikhail; Posysoev, Maksim; Lyubartsev, Alexander P. Journal of Chemical Theory and Computation, Vol. 19, Issue 19 https://doi.org/10.1021/acs.jctc.3c00516	journal	September 2023
Coarse-Graining Organic Semiconductors: The Path to Multiscale Design Jackson, Nicholas E. The Journal of Physical Chemistry B, Vol. 125, Issue 2 https://doi.org/10.1021/acs.jpcb.0c09749	journal	December 2020
Precise Control of Nanoscale Cu Etching via Gas-Phase Oxidation and Chemical Complexation Sheil, Ryan; Martirez, J. Mark P.; Sang, Xia The Journal of Physical Chemistry C, Vol. 125, Issue 3 https://doi.org/10.1021/acs.jpcc.0c08932	journal	January 2021
Molecular Mechanism of Thermal Dry Etching of Iron in a Two-Step Atomic Layer Etching Process: Chlorination Followed by Exposure to Acetylacetone Konh, Mahsa; Janotti, Anderson; Teplyakov, Andrew The Journal of Physical Chemistry C, Vol. 125, Issue 13 https://doi.org/10.1021/acs.jpcc.0c10556	journal	March 2021
Atomic Layer Etching of AlF ₃ Using Sequential, Self-Limiting Thermal Reactions with Sn(acac) ₂ and Hydrogen Fluoride Lee, Younghee; DuMont, Jaime W.; George, Steven M. The Journal of Physical Chemistry C, Vol. 119, Issue 45 https://doi.org/10.1021/acs.jpcc.5b07236	journal	November 2015
Atomic Layer Etching: Rethinking the Art of Etch Kanarik, Keren J.; Tan, Samantha; Gottscho, Richard A. The Journal of Physical Chemistry Letters, Vol. 9, Issue 16 https://doi.org/10.1021/acs.jpclett.8b00997	journal	August 2018
Predicting the Mechanical Properties of Organic Semiconductors Using Coarse-Grained Molecular Dynamics Simulations Root, Samuel E.; Savagatrup, Suchol; Pais, Christopher J. Macromolecules, Vol. 49, Issue 7 https://doi.org/10.1021/acs.macromol.6b00204	journal	March 2016
In Situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multigate MOSFETs Lu, Wenjie; Lee, Younghee; Gertsch, Jonas C. Nano Letters, Vol. 19, Issue 8 https://doi.org/10.1021/acs.nanolett.9b01525	journal	June 2019
Mechanism of Thermal Atomic Layer Etch of W Metal Using Sequential Oxidation and Chlorination: A First-Principles Study Kondati Natarajan, Suresh; Nolan, Michael; Theofanis, Patrick ACS Applied Materials & Interfaces, Vol. 12, Issue 32 https://doi.org/10.1021/acsami.0c06628	journal	July 2020
Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack Cho, Min Hoe; Choi, Cheol Hee; Seul, Hyeon Joo ACS Applied Materials & Interfaces, Vol. 13, Issue 14 https://doi.org/10.1021/acsami.0c22677	journal	April 2021
High-Density Patterning of InGaZnO by CH₄: a Comparative Study of RIE and Pulsed Plasma ALE Kundu, Shreya; Decoster, Stefan; Bezard, Philippe ACS Applied Materials & Interfaces, Vol. 14, Issue 29 https://doi.org/10.1021/acsami.2c07514	journal	July 2022
Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of Nanodevices Gerritsen, Sven H.; Chittock, Nicholas J.; Vandalon, Vincent ACS Applied Nano Materials, Vol. 5, Issue 12 https://doi.org/10.1021/acsanm.2c04025	journal	November 2022
Low Global Warming C₄H₃F₇O Isomers for Plasma Etching of SiO₂and Si₃N₄Films Kim, Yongjae; Kim, Seoeun; Kang, Hojin ACS Sustainable Chemistry & Engineering, Vol. 10, Issue 32 https://doi.org/10.1021/acssuschemeng.2c01705	journal	August 2022
Low-Temperature Etching of Cu by Hydrogen-Based Plasmas Wu, Fangyu; Levitin, Galit; Hess, Dennis W. ACS Applied Materials & Interfaces, Vol. 2, Issue 8 https://doi.org/10.1021/am1003206	journal	July 2010
Atomic Layer Deposition: An Overview George, Steven M. Chemical Reviews, Vol. 110, Issue 1, p. 111-131 https://doi.org/10.1021/cr900056b	journal	January 2010
The 1.7 Kilogram Microchip: Energy and Material Use in the Production of Semiconductor Devices Williams, Eric D.; Ayres, Robert U.; Heller, Miriam Environmental Science & Technology, Vol. 36, Issue 24 https://doi.org/10.1021/es025643o	journal	December 2002
Abatement of PFCs from Semiconductor Manufacturing Processes by Nonthermal Plasma Technologies: A Critical Review Chang, Moo Been; Chang, Jen-Shih Industrial & Engineering Chemistry Research, Vol. 45, Issue 12 https://doi.org/10.1021/ie051227b	journal	May 2006
Fluorine–Silicon Surface Reactions during Cryogenic and Near Room Temperature Etching Tinck, Stefan; Neyts, Erik C.; Bogaerts, Annemie The Journal of Physical Chemistry C, Vol. 118, Issue 51 https://doi.org/10.1021/jp5108872	journal	December 2014
Atomic Layer Etching of Al₂O₃ Using Sequential, Self-Limiting Thermal Reactions with Sn(acac)₂ and Hydrogen Fluoride Lee, Younghee; George, Steven M. ACS Nano, Vol. 9, Issue 2 https://doi.org/10.1021/nn507277f	journal	January 2015
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction Ikeda, S.; Miura, K.; Yamamoto, H. Nature Materials, Vol. 9, Issue 9 https://doi.org/10.1038/nmat2804	journal	July 2010
Ion beam etching redeposition for 3D multimaterial nanostructure manufacturing Desbiolles, B. X. E.; Bertsch, A.; Renaud, P. Microsystems & Nanoengineering, Vol. 5, Issue 1 https://doi.org/10.1038/s41378-019-0052-7	journal	April 2019
Physically informed artificial neural networks for atomistic modeling of materials Pun, G. P. Purja; Batra, R.; Ramprasad, R. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-10343-5	journal	May 2019
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction Kim, Ki Seok; Ji, You Jin; Kim, Ki Hyun Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-12592-w	journal	October 2019
E(3)-equivariant graph neural networks for data-efficient and accurate interatomic potentials Batzner, Simon; Musaelian, Albert; Sun, Lixin Nature Communications, Vol. 13, Issue 1 https://doi.org/10.1038/s41467-022-29939-5	journal	May 2022
Machine-learned potentials for next-generation matter simulations Friederich, Pascal; Häse, Florian; Proppe, Jonny Nature Materials, Vol. 20, Issue 6 https://doi.org/10.1038/s41563-020-0777-6	journal	May 2021
Human–machine collaboration for improving semiconductor process development Kanarik, Keren J.; Osowiecki, Wojciech T.; Lu, Yu Nature, Vol. 616, Issue 7958 https://doi.org/10.1038/s41586-023-05773-7	journal	March 2023
The future transistors Cao, Wei; Bu, Huiming; Vinet, Maud Nature, Vol. 620, Issue 7974 https://doi.org/10.1038/s41586-023-06145-x	journal	August 2023
Damage-free plasma etching of porous organo-silicate low-k using micro-capillary condensation above −50 °C Chanson, R.; Zhang, L.; Naumov, S. Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-20099-5	journal	January 2018
Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption Antoun, G.; Tillocher, T.; Lefaucheux, P. Scientific Reports, Vol. 11, Issue 1 https://doi.org/10.1038/s41598-020-79560-z	journal	January 2021
Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study Hidayat, Romel; Kim, Hye-Lee; Khumaini, Khabib Physical Chemistry Chemical Physics, Vol. 25, Issue 5 https://doi.org/10.1039/D2CP05456F	journal	January 2023
Extraction of chemical structures from literature and patent documents using open access chemistry toolkits: a case study with PFAS Barnabas, Shadrack J.; Böhme, Timo; Boyer, Stephen K. Digital Discovery, Vol. 1, Issue 4 https://doi.org/10.1039/D2DD00019A	journal	January 2022
Analytical model for ion angular distribution functions at rf biased surfaces with collisionless plasma sheaths Raja, Laxminarayan L.; Linne, Mark Journal of Applied Physics, Vol. 92, Issue 12 https://doi.org/10.1063/1.1524020	journal	December 2002
Improved interatomic potentials for silicon–fluorine and silicon–chlorine Humbird, David; Graves, David B. The Journal of Chemical Physics, Vol. 120, Issue 5 https://doi.org/10.1063/1.1636722	journal	February 2004
Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition Yanai, Ken-ichi; Karahashi, Kazuhiro; Ishikawa, Kenji Journal of Applied Physics, Vol. 97, Issue 5 https://doi.org/10.1063/1.1854726	journal	February 2005
SiO_xF_y passivation layer in silicon cryoetching Mellhaoui, X.; Dussart, R.; Tillocher, T. Journal of Applied Physics, Vol. 98, Issue 10, Article No. 104901 https://doi.org/10.1063/1.2133896	journal	November 2005
Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr+ Nagaoka, T.; Eriguchi, K.; Ono, K. Journal of Applied Physics, Vol. 105, Issue 2 https://doi.org/10.1063/1.3056391	journal	January 2009
In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process Pereira, J.; Pichon, L. E.; Dussart, R. Applied Physics Letters, Vol. 94, Issue 7 https://doi.org/10.1063/1.3085957	journal	February 2009
Absolute vacuum ultraviolet flux in inductively coupled plasmas and chemical modifications of 193 nm photoresist Titus, M. J.; Nest, D.; Graves, D. B. Applied Physics Letters, Vol. 94, Issue 17 https://doi.org/10.1063/1.3125260	journal	April 2009
Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching Coburn, J. W.; Winters, Harold F. Journal of Applied Physics, Vol. 50, Issue 5 https://doi.org/10.1063/1.326355	journal	May 1979
High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics Wang, Mingmei; Kushner, Mark J. Journal of Applied Physics, Vol. 107, Issue 2 https://doi.org/10.1063/1.3290873	journal	January 2010
Prediction of UV spectra and UV-radiation damage in actual plasma etching processes using on-wafer monitoring technique Jinnai, Butsurin; Fukuda, Seiichi; Ohtake, Hiroto Journal of Applied Physics, Vol. 107, Issue 4 https://doi.org/10.1063/1.3313924	journal	February 2010
High aspect ratio silicon etch: A review Wu, Banqiu; Kumar, Ajay; Pamarthy, Sharma Journal of Applied Physics, Vol. 108, Issue 5 https://doi.org/10.1063/1.3474652	journal	September 2010
CF2 production and loss mechanisms in fluorocarbon discharges: Fluorine-poor conditions and polymerization Cunge, G.; Booth, J. P. Journal of Applied Physics, Vol. 85, Issue 8 https://doi.org/10.1063/1.370296	journal	April 1999
Control of ion energy distribution at substrates during plasma processing Wang, S. -B.; Wendt, A. E. Journal of Applied Physics, Vol. 88, Issue 2 https://doi.org/10.1063/1.373715	journal	July 2000
Photo-assisted etching of silicon in chlorine- and bromine-containing plasmas Zhu, Weiye; Sridhar, Shyam; Liu, Lei Journal of Applied Physics, Vol. 115, Issue 20 https://doi.org/10.1063/1.4878895	journal	May 2014
Control of ion energy distributions using phase shifting in multi-frequency capacitively coupled plasmas Zhang, Yiting; Zafar, Abdullah; Coumou, David J. Journal of Applied Physics, Vol. 117, Issue 23 https://doi.org/10.1063/1.4922631	journal	June 2015
Cryogenic plasma-processed silicon microspikes as a high-performance anode material for lithium ion-batteries Sakai, Joe; Luais, Erwann; Wolfman, Jérôme Journal of Applied Physics, Vol. 122, Issue 15 https://doi.org/10.1063/1.4997713	journal	October 2017
NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node Chen, Linghan; Ando, Daisuke; Sutou, Yuji Applied Physics Letters, Vol. 113, Issue 18 https://doi.org/10.1063/1.5049620	journal	October 2018
Cryo atomic layer etching of SiO ₂ by C ₄ F ₈ physisorption followed by Ar plasma Antoun, G.; Lefaucheux, P.; Tillocher, T. Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5119033	journal	October 2019
Machine learning for interatomic potential models Mueller, Tim; Hernandez, Alberto; Wang, Chuhong The Journal of Chemical Physics, Vol. 152, Issue 5 https://doi.org/10.1063/1.5126336	journal	February 2020
The search for the most conductive metal for narrow interconnect lines Gall, Daniel Journal of Applied Physics, Vol. 127, Issue 5 https://doi.org/10.1063/1.5133671	journal	February 2020
Low‐temperature reactive ion etching and microwave plasma etching of silicon Tachi, Shinichi; Tsujimoto, Kazunori; Okudaira, Sadayuki Applied Physics Letters, Vol. 52, Issue 8, p. 616-618 https://doi.org/10.1063/1.99382	journal	February 1988
Characterization of descriptors in machine learning for data-based sputtering yield prediction Kino, Hiori; Ikuse, Kazumasa; Dam, Hieu-Chi Physics of Plasmas, Vol. 28, Issue 1 https://doi.org/10.1063/5.0006816	journal	January 2021
Three-dimensional measurements of fundamental plasma parameters in pulsed ICP operation Han, Jia; Pribyl, Patrick; Gekelman, Walter Physics of Plasmas, Vol. 27, Issue 6 https://doi.org/10.1063/5.0007288	journal	June 2020
Coarse graining molecular dynamics with graph neural networks Husic, Brooke E.; Charron, Nicholas E.; Lemm, Dominik The Journal of Chemical Physics, Vol. 153, Issue 19 https://doi.org/10.1063/5.0026133	journal	November 2020
Multiscale modeling of plasma–surface interaction—General picture and a case study of Si and SiO2 etching by fluorocarbon-based plasmas Vanraes, Patrick; Parayil Venugopalan, Syam; Bogaerts, Annemie Applied Physics Reviews, Vol. 8, Issue 4 https://doi.org/10.1063/5.0058904	journal	October 2021
Deep coarse-grained potentials via relative entropy minimization Thaler, Stephan; Stupp, Maximilian; Zavadlav, Julija The Journal of Chemical Physics, Vol. 157, Issue 24 https://doi.org/10.1063/5.0124538	journal	December 2022
Cryogenic etching of silicon compounds using a CHF3 based plasma Dussart, R.; Ettouri, R.; Nos, J. Journal of Applied Physics, Vol. 133, Issue 11 https://doi.org/10.1063/5.0142056	journal	March 2023
Multilayering FeGa with NiFe and Al2O3 to enhance the soft magnetic properties Acosta, Adrian; Burnside, Emily; Fitzell, Kevin Applied Physics Letters, Vol. 123, Issue 9 https://doi.org/10.1063/5.0151283	journal	August 2023
Kinetic simulation of a 50 mTorr capacitively coupled argon discharge over a range of frequencies and comparison to experiments Simha, Saurabh; Sharma, Sarveshwar; Khrabrov, Alexander Physics of Plasmas, Vol. 30, Issue 8 https://doi.org/10.1063/5.0157347	journal	August 2023
Isotropic atomic layer etching of GaN using SF6 plasma and Al(CH3)3 Chittock, Nicholas J.; Shu, Yi; Elliott, Simon D. Journal of Applied Physics, Vol. 134, Issue 7 https://doi.org/10.1063/5.0158129	journal	August 2023
An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases Hsiao, Shih-Nan; Sekine, Makoto; Ishikawa, Kenji Applied Physics Letters, Vol. 123, Issue 21 https://doi.org/10.1063/5.0173553	journal	November 2023
Interatomic potentials: achievements and challenges Müser, Martin H.; Sukhomlinov, Sergey V.; Pastewka, Lars Advances in Physics: X, Vol. 8, Issue 1 https://doi.org/10.1080/23746149.2022.2093129	journal	November 2022
Inductively coupled plasmas in low global-warming-potential gases Goyette, A. N.; Wang, Yicheng; Olthoff, J. K. Journal of Physics D: Applied Physics, Vol. 33, Issue 16 https://doi.org/10.1088/0022-3727/33/16/312	journal	August 2000
Silicon columnar microstructures induced by an SF ₆ /O ₂ plasma Dussart, R.; Mellhaoui, X.; Tillocher, T. Journal of Physics D: Applied Physics, Vol. 38, Issue 18 https://doi.org/10.1088/0022-3727/38/18/012	journal	September 2005
Ion energy and angular distributions into the wafer–focus ring gap in capacitively coupled discharges Babaeva, Natalia Y.; Kushner, Mark J. Journal of Physics D: Applied Physics, Vol. 41, Issue 6 https://doi.org/10.1088/0022-3727/41/6/062004	journal	February 2008
Molecular dynamics for low temperature plasma–surface interaction studies Graves, David B.; Brault, Pascal Journal of Physics D: Applied Physics, Vol. 42, Issue 19 https://doi.org/10.1088/0022-3727/42/19/194011	journal	September 2009
Hybrid modelling of low temperature plasmas for fundamental investigations and equipment design Kushner, Mark J. Journal of Physics D: Applied Physics, Vol. 42, Issue 19 https://doi.org/10.1088/0022-3727/42/19/194013	journal	September 2009
The effect of VUV radiation from Ar/O₂ plasmas on low-k SiOCH films Lee, J.; Graves, D. B. Journal of Physics D: Applied Physics, Vol. 44, Issue 32 https://doi.org/10.1088/0022-3727/44/32/325203	journal	July 2011
Highly selective silicon nitride etching to Si and SiO₂ for a gate sidewall spacer using a CF₃I/O₂/H₂ neutral beam Nakayama, Daiki; Wada, Akira; Kubota, Tomohiro Journal of Physics D: Applied Physics, Vol. 46, Issue 20 https://doi.org/10.1088/0022-3727/46/20/205203	journal	May 2013
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies Dussart, R.; Tillocher, T.; Lefaucheux, P. Journal of Physics D: Applied Physics, Vol. 47, Issue 12 https://doi.org/10.1088/0022-3727/47/12/123001	journal	March 2014
Ion beam experiments for the study of plasma–surface interactions Karahashi, Kazuhiro; Hamaguchi, Satoshi Journal of Physics D: Applied Physics, Vol. 47, Issue 22 https://doi.org/10.1088/0022-3727/47/22/224008	journal	May 2014
The grand challenges of plasma etching: a manufacturing perspective Lee, Chris G. N.; Kanarik, Keren J.; Gottscho, Richard A. Journal of Physics D: Applied Physics, Vol. 47, Issue 27 https://doi.org/10.1088/0022-3727/47/27/273001	journal	June 2014
Pulsed plasma etching for semiconductor manufacturing Economou, Demetre J. Journal of Physics D: Applied Physics, Vol. 47, Issue 30 https://doi.org/10.1088/0022-3727/47/30/303001	journal	July 2014
Cryogenic etching processes applied to porous low-kmaterials using SF₆/C₄F₈plasmas Leroy, F.; Zhang, L.; Tillocher, T. Journal of Physics D: Applied Physics, Vol. 48, Issue 43 https://doi.org/10.1088/0022-3727/48/43/435202	journal	September 2015
Theory of the oxidation of metals Cabrera, N.; Mott, N. F. Reports on Progress in Physics, Vol. 12, Issue 1 https://doi.org/10.1088/0034-4885/12/1/308	journal	January 1949
Reactions of halogens with surfaces stimulated by VUV light Ney, Verena; Schwentner, Nikolaus Journal of Physics: Condensed Matter, Vol. 18, Issue 30 https://doi.org/10.1088/0953-8984/18/30/S12	journal	July 2006
Progress of radical measurements in plasmas for semiconductor processing Hori, Masaru; Goto, Toshio Plasma Sources Science and Technology, Vol. 15, Issue 2 https://doi.org/10.1088/0963-0252/15/2/S10	journal	April 2006
Controlling VUV photon fluxes in low-pressure inductively coupled plasmas Tian, Peng; Kushner, Mark J. Plasma Sources Science and Technology, Vol. 24, Issue 3 https://doi.org/10.1088/0963-0252/24/3/034017	journal	May 2015
Tailored-waveform excitation of capacitively coupled plasmas and the electrical asymmetry effect Lafleur, T. Plasma Sources Science and Technology, Vol. 25, Issue 1 https://doi.org/10.1088/0963-0252/25/1/013001	journal	November 2015
Ion energy distributions in rf sheaths; review, analysis and simulation Kawamura, E.; Vahedi, V.; Lieberman, M. A. Plasma Sources Science and Technology, Vol. 8, Issue 3 https://doi.org/10.1088/0963-0252/8/3/202	journal	January 1999
Electron collisions—experiment, theory, and applications Bartschat, Klaus Journal of Physics B: Atomic, Molecular and Optical Physics, Vol. 51, Issue 13 https://doi.org/10.1088/1361-6455/aac5aa	journal	June 2018
Etching with atomic precision by using low electron temperature plasma Dorf, L.; Wang, J-C; Rauf, S. Journal of Physics D: Applied Physics, Vol. 50, Issue 27 https://doi.org/10.1088/1361-6463/aa7357	journal	June 2017
Machine learning for modeling, diagnostics, and control of non-equilibrium plasmas Mesbah, Ali; Graves, David B. Journal of Physics D: Applied Physics, Vol. 52, Issue 30 https://doi.org/10.1088/1361-6463/ab1f3f	journal	May 2019
Control of electron velocity distributions at the wafer by tailored voltage waveforms in capacitively coupled plasmas to compensate surface charging in high-aspect ratio etch features Hartmann, P.; Wang, L.; Nösges, K. Journal of Physics D: Applied Physics, Vol. 54, Issue 25 https://doi.org/10.1088/1361-6463/abf229	journal	April 2021
Fast and realistic 3D feature profile simulation platform for plasma etching process Yook, Yeong Geun; You, Hae Sung; Park, Jae Hyeong Journal of Physics D: Applied Physics, Vol. 55, Issue 25 https://doi.org/10.1088/1361-6463/ac58cf	journal	March 2022
Physics-separating artificial neural networks for predicting initial stages of Al sputtering and thin film deposition in Ar plasma discharges Gergs, Tobias; Mussenbrock, Thomas; Trieschmann, Jan Journal of Physics D: Applied Physics, Vol. 56, Issue 8 https://doi.org/10.1088/1361-6463/acb6a4	journal	February 2023
Computational approach for plasma process optimization combined with deep learning model Ko, Jungmin; Bae, Jinkyu; Park, Minho Journal of Physics D: Applied Physics, Vol. 56, Issue 34 https://doi.org/10.1088/1361-6463/acd1fd	journal	May 2023
A regression model for plasma reaction kinetics Hanicinec, Martin; Mohr, Sebastian; Tennyson, Jonathan Journal of Physics D: Applied Physics, Vol. 56, Issue 37 https://doi.org/10.1088/1361-6463/acd390	journal	June 2023
Computational simulations of spatio—temporal plasma dynamics in a very high frequency capacitively coupled reactor Upadhyay, Rochan R. Journal of Physics D: Applied Physics, Vol. 56, Issue 43 https://doi.org/10.1088/1361-6463/ace9e7	journal	August 2023
In situmeasurement of VUV/UV radiation from low-pressure microwave-produced plasma in Ar/O₂gas mixtures Iglesias, E. J.; Mitschker, F.; Fiebrandt, M. Measurement Science and Technology, Vol. 28, Issue 8 https://doi.org/10.1088/1361-6501/aa7816	journal	July 2017
Charged particle dynamics and distribution functions in low pressure dual-frequency capacitively coupled plasmas operated at low frequencies and high voltages Hartmann, P.; Wang, L.; Nösges, K. Plasma Sources Science and Technology, Vol. 29, Issue 7 https://doi.org/10.1088/1361-6595/ab9374	journal	July 2020
The 2021 release of the Quantemol database (QDB) of plasma chemistries and reactions Tennyson, Jonathan; Mohr, Sebastian; Hanicinec, M. Plasma Sources Science and Technology, Vol. 31, Issue 9 https://doi.org/10.1088/1361-6595/ac907e	journal	September 2022
Foundations of atomic-level plasma processing in nanoelectronics Arts, Karsten; Hamaguchi, Satoshi; Ito, Tomoko Plasma Sources Science and Technology, Vol. 31, Issue 10 https://doi.org/10.1088/1361-6595/ac95bc	journal	October 2022
Foundations of machine learning for low-temperature plasmas: methods and case studies Bonzanini, Angelo D.; Shao, Ketong; Graves, David B. Plasma Sources Science and Technology, Vol. 32, Issue 2 https://doi.org/10.1088/1361-6595/acb28c	journal	February 2023
Plasma dynamics in a capacitively coupled discharge driven by a combination of a single high frequency and a tailored low frequency rectangular voltage waveform Rauf, Shahid; Schroeder, Manuel; Korolov, Ihor Plasma Sources Science and Technology, Vol. 32, Issue 3 https://doi.org/10.1088/1361-6595/acc12d	journal	March 2023
Benchmarking and validation of a hybrid model for electropositive and electronegative capacitively coupled plasmas Zhang, Yu-Ru; Huang, Jia-Wei; Zhou, Fang-Jie Plasma Sources Science and Technology, Vol. 32, Issue 5 https://doi.org/10.1088/1361-6595/acce63	journal	May 2023
Modeling of very high frequency large-electrode capacitively coupled plasmas with a fully electromagnetic particle-in-cell code Eremin, D.; Kemaneci, E.; Matsukuma, M. Plasma Sources Science and Technology, Vol. 32, Issue 4 https://doi.org/10.1088/1361-6595/accecb	journal	April 2023
How robust are modern graph neural network potentials in long and hot molecular dynamics simulations? Stocker, Sina; Gasteiger, Johannes; Becker, Florian Machine Learning: Science and Technology, Vol. 3, Issue 4 https://doi.org/10.1088/2632-2153/ac9955	journal	November 2022
Quantum Efficiency of Silicon in the Vacuum Ultraviolet Tuzzolino, A. J. Physical Review, Vol. 134, Issue 1A https://doi.org/10.1103/PhysRev.134.A205	journal	April 1964
Influence of doping on the etching of Si(111) Winters, Harold F.; Haarer, D. Physical Review B, Vol. 36, Issue 12 https://doi.org/10.1103/PhysRevB.36.6613	journal	October 1987
Photochemical etching of silicon: The influence of photogenerated charge carriers Houle, F. A. Physical Review B, Vol. 39, Issue 14 https://doi.org/10.1103/PhysRevB.39.10120	journal	May 1989
Ab Initio Study of Hot Carriers in the First Picosecond after Sunlight Absorption in Silicon Bernardi, Marco; Vigil-Fowler, Derek; Lischner, Johannes Physical Review Letters, Vol. 112, Issue 25 https://doi.org/10.1103/PhysRevLett.112.257402	journal	June 2014
Generalized Neural-Network Representation of High-Dimensional Potential-Energy Surfaces Behler, Jörg; Parrinello, Michele Physical Review Letters, Vol. 98, Issue 14 https://doi.org/10.1103/PhysRevLett.98.146401	journal	April 2007
Simulation of elevated temperature aluminum metallization using SIMBAD Dew, S. K.; Smy, T.; Brett, M. J. IEEE Transactions on Electron Devices, Vol. 39, Issue 7 https://doi.org/10.1109/16.141224	journal	July 1992
Robust, stable, and accurate boundary movement for physical etching and deposition simulation No authors listed IEEE Transactions on Electron Devices, Vol. 44, Issue 9 https://doi.org/10.1109/16.622591	journal	January 1997
Analytical solution for capacitive RF sheath Lieberman, M. A. IEEE Transactions on Plasma Science, Vol. 16, Issue 6 https://doi.org/10.1109/27.16552	journal	January 1988
Dynamics of a collisional, capacitive RF sheath Lieberman, M. A. IEEE Transactions on Plasma Science, Vol. 17, Issue 2 https://doi.org/10.1109/27.24645	journal	April 1989
Design of ion-implanted MOSFET's with very small physical dimensions Dennard, R. H.; Gaensslen, F. H.; Rideout, V. L. IEEE Journal of Solid-State Circuits, Vol. 9, Issue 5 https://doi.org/10.1109/JSSC.1974.1050511	journal	October 1974
2.5D and 3D Heterogeneous Integration: Emerging applications Sheikh, Farhana; Nagisetty, Ramune; Karnik, Tanay IEEE Solid-State Circuits Magazine, Vol. 13, Issue 4 https://doi.org/10.1109/MSSC.2021.3111386	journal	January 2021
Cramming more components onto integrated circuits, Reprinted from Electronics, volume 38, number 8, April 19, 1965, pp.114 ff. Moore, Gordon E. IEEE Solid-State Circuits Society Newsletter, Vol. 11, Issue 3 https://doi.org/10.1109/N-SSC.2006.4785860	journal	September 2006
A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory Chien, Wei-Chih; Yeh, Chiao-Wen; Bruce, Robert L. IEEE Transactions on Electron Devices, Vol. 65, Issue 11 https://doi.org/10.1109/TED.2018.2871197	journal	November 2018
2022 Review of Data-Driven Plasma Science Anirudh, Rushil; Archibald, Rick; Asif, M. Salman IEEE Transactions on Plasma Science https://doi.org/10.1109/TPS.2023.3268170	journal	January 2023
High Accuracy Simulation of Silicon Oxynitride Film Grown by Plasma Enhanced Chemical Vapor Deposition Shao, Hua; Chen, Rui; Dong, Lisong IEEE Transactions on Semiconductor Manufacturing, Vol. 35, Issue 2 https://doi.org/10.1109/TSM.2022.3143838	journal	May 2022
Control of surface reactions in high-performance SiO2 etching Tatsumi, T.; Matsui, M.; Okigawa, M. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 18, Issue 4 https://doi.org/10.1116/1.1305807	journal	July 2000
Absolute intensities of the vacuum ultraviolet spectra in oxide etch plasma processing discharges Woodworth, J. R.; Riley, M. E.; Amatucci, V. A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, Issue 1 https://doi.org/10.1116/1.1335685	journal	January 2001
Semiempirical profile simulation of aluminum etching in a Cl2/BCl3 plasma Cooperberg, D. J.; Vahedi, V.; Gottscho, R. A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, Issue 5 https://doi.org/10.1116/1.1494818	journal	September 2002
Monte Carlo simulation method for etching of deep trenches in Si by a SF6/O2 plasma mixture Marcos, G.; Rhallabi, A.; Ranson, P. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 21, Issue 1 https://doi.org/10.1116/1.1521959	journal	January 2003
Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes Okigawa, Mitsuru; Ishikawa, Yasushi; Samukawa, Seiji Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 21, Issue 6 https://doi.org/10.1116/1.1629712	journal	November 2003
Etching yield of SiO2 irradiated by F+, CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV Karahashi, Kazuhiro; Yanai, Ken-ichi; Ishikawa, Kenji Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, Issue 4 https://doi.org/10.1116/1.1761119	journal	June 2004
Using Ni masks in inductively coupled plasma etching of high density hole patterns in GaN Hsu, David S. Y.; Kim, Chul Soo; Eddy, Charles R. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 4 https://doi.org/10.1116/1.1978896	journal	January 2005
Oxidation threshold in silicon etching at cryogenic temperatures Tillocher, T.; Dussart, R.; Mellhaoui, X. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, Issue 4 https://doi.org/10.1116/1.2210946	journal	June 2006
Low-damage low-k etching with an environmentally friendly CF3I plasma Soda, Eiichi; Kondo, Seiichi; Saito, Shuichi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 26, Issue 4 https://doi.org/10.1116/1.2919137	journal	July 2008
Plasma atomic layer etching using conventional plasma equipment Agarwal, Ankur; Kushner, Mark J. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 27, Issue 1 https://doi.org/10.1116/1.3021361	journal	January 2009
Etching of SiO2 in C4F8∕Ar plasmas. II. Simulation of surface roughening and local polymerization Guo, Wei; Sawin, Herbert H. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 28, Issue 2 https://doi.org/10.1116/1.3290766	journal	February 2010
High rate deep Si etching for through-silicon via applications Sakai, Itsuko; Sakurai, Noriko; Ohiwa, Tokuhisa Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 29, Issue 2 https://doi.org/10.1116/1.3543635	journal	January 2011
Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2+, and CH2F+ ions Ito, Tomoko; Karahashi, Kazuhiro; Fukasawa, Masanaga Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 29, Issue 5 https://doi.org/10.1116/1.3610981	journal	July 2011
Surprising importance of photo-assisted etching of silicon in chlorine-containing plasmas Shin, Hyungjoo; Zhu, Weiye; Donnelly, Vincent M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 2 https://doi.org/10.1116/1.3681285	journal	March 2012
Pulsed high-density plasmas for advanced dry etching processes Banna, Samer; Agarwal, Ankur; Cunge, Gilles Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 30, Issue 4 https://doi.org/10.1116/1.4716176	journal	July 2012
Plasma etching: Yesterday, today, and tomorrow Donnelly, Vincent M.; Kornblit, Avinoam Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 5 https://doi.org/10.1116/1.4819316	journal	September 2013
Fluorocarbon assisted atomic layer etching of SiO ₂ using cyclic Ar/C ₄ F ₈ plasma Metzler, Dominik; Bruce, Robert L.; Engelmann, Sebastian Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2 https://doi.org/10.1116/1.4843575	journal	March 2014
Comparison of surface vacuum ultraviolet emissions with resonance level number densities. I. Argon plasmas Boffard, John B.; Lin, Chun C.; Culver, Cody Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 2 https://doi.org/10.1116/1.4859376	journal	March 2014
Thermodynamic assessment and experimental verification of reactive ion etching of magnetic metal elements Kim, Taeseung; Chen, Jack Kun-Chieh; Chang, Jane P. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 32, Issue 4 https://doi.org/10.1116/1.4885061	journal	June 2014
Study on contact distortion during high aspect ratio contact SiO ₂ etching Kim, Jong Kyu; Lee, Sung Ho; Cho, Sung Il Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2 https://doi.org/10.1116/1.4901872	journal	March 2015
Overview of atomic layer etching in the semiconductor industry Kanarik, Keren J.; Lill, Thorsten; Hudson, Eric A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 2 https://doi.org/10.1116/1.4913379	journal	March 2015
Transfer of nanopantography-defined patterns using highly selective plasma etching Tian, Siyuan; Donnelly, Vincent M.; Economou, Demetre J. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, Issue 3 https://doi.org/10.1116/1.4918716	journal	May 2015
Fluorocarbon assisted atomic layer etching of SiO ₂ and Si using cyclic Ar/C ₄ F ₈ and Ar/CHF ₃ plasma Metzler, Dominik; Li, Chen; Engelmann, Sebastian Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1 https://doi.org/10.1116/1.4935462	journal	January 2016
Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low T _e plasma sources Jagtiani, Ashish V.; Miyazoe, Hiroyuki; Chang, Josephine Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 1 https://doi.org/10.1116/1.4936622	journal	January 2016
Formation of a SiOF reaction intermixing layer on SiO2 etching using C4F6/O2/Ar plasmas Ohya, Yoshinobu; Tomura, Maju; Ishikawa, Kenji Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 4 https://doi.org/10.1116/1.4949570	journal	May 2016
Insights into the mechanism of in-plasma photo-assisted etching using optical emission spectroscopy Sridhar, Shyam; Liu, Lei; Hirsch, Emilia W. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 34, Issue 6 https://doi.org/10.1116/1.4964641	journal	November 2016
SiO2 etching in an Ar/c-C4F8/O2 dual frequency capacitively coupled plasma Rauf, Shahid; Balakrishna, Ajit Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 2 https://doi.org/10.1116/1.4973299	journal	December 2016
Ion beam assisted organic chemical vapor etch of magnetic thin films Chen, Jack Kun-Chieh; Kim, Taeseung; Altieri, Nicholas D. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 3 https://doi.org/10.1116/1.4978553	journal	March 2017
Atomic layer etching of 3D structures in silicon: Self-limiting and nonideal reactions Huard, Chad M.; Zhang, Yiting; Sriraman, Saravanapriyan Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 3 https://doi.org/10.1116/1.4979661	journal	May 2017
Directional etch of magnetic and noble metals. II. Organic chemical vapor etch Chen, Jack Kun-Chieh; Altieri, Nicholas D.; Kim, Taeseung Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 5 https://doi.org/10.1116/1.4983830	journal	September 2017
Bottom profile degradation mechanism in high aspect ratio feature etching based on pattern transfer observation Negishi, Nobuyuki; Miyake, Masatoshi; Yokogawa, Ken'etsu Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 35, Issue 5 https://doi.org/10.1116/1.4998943	journal	September 2017
SiO2 etch characteristics and environmental impact of Ar/C3F6O chemistry Lee, Ho Seok; Yang, Kyung Chae; Kim, Soo Gang Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 36, Issue 6 https://doi.org/10.1116/1.5027446	journal	November 2018
Enhanced silicon nitride etching in the presence of F atoms: Quantum chemistry simulation Barsukov, Yuri V.; Volynets, Vladimir; Kobelev, Anton A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 36, Issue 6 https://doi.org/10.1116/1.5044647	journal	August 2018
Molecular mechanisms of atomic layer etching of cobalt with sequential exposure to molecular chlorine and diketones Konh, Mahsa; He, Chuan; Lin, Xi Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 37, Issue 2 https://doi.org/10.1116/1.5082187	journal	February 2019
Plasma etching of high aspect ratio features in SiO 2 using Ar/C 4 F 8 /O 2 mixtures: A computational investigation Huang, Shuo; Huard, Chad; Shim, Seungbo Journal of Vacuum Science & Technology A, Vol. 37, Issue 3 https://doi.org/10.1116/1.5090606	journal	May 2019
Low-global warming potential fluoroether compounds for plasma etching of SiO2 and Si3N4 layers Cha, Taehwan; Kim, Yongjae; Lee, Sangin Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 37, Issue 5 https://doi.org/10.1116/1.5100302	journal	July 2019
Insights into different etching properties of continuous wave and atomic layer etching processes for SiO2 and Si3N4 films using voxel-slab model Kuboi, Nobuyuki; Tatsumi, Tetsuya; Komachi, Jun Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 37, Issue 5 https://doi.org/10.1116/1.5105384	journal	August 2019
Pattern dependent profile distortion during plasma etching of high aspect ratio features in SiO 2 Huang, Shuo; Shim, Seungbo; Nam, Sang Ki Journal of Vacuum Science & Technology A, Vol. 38, Issue 2 https://doi.org/10.1116/1.5132800	journal	March 2020
Inside the mysterious world of plasma: A process engineer’s perspective Kanarik, Keren J. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 38, Issue 3 https://doi.org/10.1116/1.5141863	journal	March 2020
Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si₃N₄ and Si etching Li, Chen; Godyak, Valery; Hofmann, Thorsten Journal of Vacuum Science & Technology A, Vol. 38, Issue 3 https://doi.org/10.1116/1.5143537	journal	May 2020
Optical spectroscopy for diagnostics and process control during glow discharge etching and sputter deposition Greene, J. E. Journal of Vacuum Science and Technology, Vol. 15, Issue 5 https://doi.org/10.1116/1.569834	journal	September 1978
Plasma etching—A discussion of mechanisms Coburn, J. W.; Winters, Harold F. Journal of Vacuum Science and Technology, Vol. 16, Issue 2 https://doi.org/10.1116/1.569958	journal	March 1979
Structural transitions in ballistic aggregation simulation of thin-film growth Brett, M. J. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 6, Issue 3 https://doi.org/10.1116/1.575285	journal	May 1988
Monte Carlo low pressure deposition profile simulations Rey, Juan C.; Cheng, Lie-Yea; McVittie, James P. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 9, Issue 3 https://doi.org/10.1116/1.577580	journal	May 1991
Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF ₄ and CHF ₃ Oehrlein, G. S.; Zhang, Y.; Vender, D. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, Issue 2 https://doi.org/10.1116/1.578876	journal	March 1994
Microprofile simulations for plasma etching with surface passivation Hamaguchi, S.; Dalvie, M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, Issue 5 https://doi.org/10.1116/1.579099	journal	September 1994
Surface processes in plasma-assisted etching environments Winters, Harold F. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 1, Issue 2 https://doi.org/10.1116/1.582629	journal	January 1983
Chemical sputtering of silicon by F+, Cl+, and Br+ ions: Reactive spot model for reactive ion etching Tachi, Shin’ichi; Okudaira, Sadayuki Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, Vol. 4, Issue 2 https://doi.org/10.1116/1.583404	journal	March 1986
Silicon doping effects in reactive plasma etching Lee, Young H. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, Issue 2 https://doi.org/10.1116/1.583405	journal	March 1986
Reaction of silicon with chlorine and ultraviolet laser induced chemical etching mechanisms Sesselmann, W. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, Issue 5 https://doi.org/10.1116/1.584474	journal	September 1989
Microscopic uniformity in plasma etching Gottscho, Richard A. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 5 https://doi.org/10.1116/1.586180	journal	September 1992
Profile modeling of high density plasma oxide etching Han, Joseph S. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, Issue 4 https://doi.org/10.1116/1.587831	journal	July 1995
Across-wafer nonuniformity of long throw sputter deposition Mayo, A. A.; Hamaguchi, S.; Joo, J. H. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, Vol. 15, Issue 5 https://doi.org/10.1116/1.589526	journal	September 1997
Patterning nickel for extreme ultraviolet lithography mask application I. Atomic layer etch processing Sang, Xia; Chen, Ernest; Chang, Jane P. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 38, Issue 4 https://doi.org/10.1116/6.0000190	journal	June 2020
Patterning nickel for extreme ultraviolet lithography mask application. II. Hybrid reactive ion etch and atomic layer etch processing Sang, Xia; Chang, Jane P. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 38, Issue 4 https://doi.org/10.1116/6.0000191	journal	July 2020
Dry etching strategy of spin-transfer-torque magnetic random access memory: A review Islam, Rabiul; Cui, Bo; Miao, Guo-Xing Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 38, Issue 5 https://doi.org/10.1116/6.0000205	journal	August 2020
Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes Basher, Abdulrahman H.; Krstić, Marjan; Fink, Karin Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 38, Issue 5 https://doi.org/10.1116/6.0000293	journal	August 2020
Review on recent progress in patterning phase change materials Shen, Meihua; Lill, Thorsten; Altieri, Nick Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 38, Issue 6 https://doi.org/10.1116/6.0000336	journal	September 2020
Effects of O₂ addition on in-plasma photo-assisted etching of Si with chlorine Du, Linfeng; Hirsch, Emilia W.; Economou, Demetre J. Journal of Vacuum Science & Technology A, Vol. 38, Issue 5 https://doi.org/10.1116/6.0000338	journal	September 2020
Universal scaling relationship for atomic layer etching Kanarik, Keren J.; Tan, Samantha; Yang, Wenbing Journal of Vacuum Science & Technology A, Vol. 39, Issue 1 https://doi.org/10.1116/6.0000762	journal	January 2021
Atomic layer etching of GaN using Cl2 and He or Ar plasma Ruel, Simon; Pimenta-Barros, Patricia; Le Roux, Frédéric Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 39, Issue 2 https://doi.org/10.1116/6.0000830	journal	February 2021
Thermal atomic layer etching of germanium-rich SiGe using an oxidation and “conversion-etch” mechanism Abdulagatov, Aziz I.; Sharma, Varun; Murdzek, Jessica A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 39, Issue 2 https://doi.org/10.1116/6.0000834	journal	February 2021
Thermal atomic layer etching: A review Fischer, Andreas; Routzahn, Aaron; George, Steven M. Journal of Vacuum Science & Technology A, Vol. 39, Issue 3 https://doi.org/10.1116/6.0000894	journal	May 2021
Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas Mori, Masahito; Irie, Shoki; Osano, Yugo Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 39, Issue 4 https://doi.org/10.1116/6.0000970	journal	May 2021
Effect of nonvertical ion bombardment due to edge effects on polymer surface morphology evolution and etching uniformity Pranda, Adam; Li, Chen; Seo, Youngsik Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 39, Issue 4 https://doi.org/10.1116/6.0001015	journal	May 2021
Plasma-enhanced atomic layer deposition of SiO2 film using capacitively coupled Ar/O2 plasmas: A computational investigation Qu, Chenhui; Sakiyama, Yukinori; Agarwal, Pulkit Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 39, Issue 5 https://doi.org/10.1116/6.0001121	journal	August 2021
Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF5+ ions Tinacba, Erin Joy Capdos; Ito, Tomoko; Karahashi, Kazuhiro Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 39, Issue 4 https://doi.org/10.1116/6.0001230	journal	July 2021
Effects of structured electrodes on electron power absorption and plasma uniformity in capacitive RF discharges Wang, Li; Hartmann, Peter; Donkó, Zoltán Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 39, Issue 6 https://doi.org/10.1116/6.0001327	journal	October 2021
Deposit and etchback approach for ultrathin Al2O3 films with low pinhole density using atomic layer deposition and atomic layer etching Gertsch, Jonas C.; Sortino, Emanuele; Bright, Victor M. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 39, Issue 6 https://doi.org/10.1116/6.0001340	journal	November 2021
Efficient plasma-surface interaction surrogate model for sputtering processes based on autoencoder neural networks Gergs, Tobias; Borislavov, Borislav; Trieschmann, Jan Journal of Vacuum Science & Technology B, Vol. 40, Issue 1 https://doi.org/10.1116/6.0001485	journal	January 2022
Plasma atomic layer etching for titanium nitride at low temperatures Shim, Dahee; Kim, Jihyun; Kim, Yongjae Journal of Vacuum Science & Technology B, Vol. 40, Issue 2 https://doi.org/10.1116/6.0001602	journal	February 2022
Plasma-assisted thermal-cyclic atomic-layer etching of tungsten and control of its selectivity to titanium nitride Shinoda, Kazunori; Miyoshi, Nobuya; Kobayashi, Hiroyuki Journal of Vacuum Science & Technology B, Vol. 40, Issue 2 https://doi.org/10.1116/6.0001660	journal	February 2022
Plasma-based area selective deposition for extreme ultraviolet resist defectivity reduction and process window improvement Lutker-Lee, Katie; Church, Jennifer; Miller, Eric Journal of Vacuum Science & Technology B, Vol. 40, Issue 3 https://doi.org/10.1116/6.0001665	journal	May 2022
In-depth feasibility study of extreme ultraviolet damascene extension: Patterning, dielectric etch, and metallization Sun, Xinghua; Mignot, Yann; Cole, Christopher Journal of Vacuum Science & Technology B, Vol. 40, Issue 2 https://doi.org/10.1116/6.0001671	journal	February 2022
Molecular dynamics study of silicon atomic layer etching by chlorine gas and argon ions Vella, Joseph R.; Humbird, David; Graves, David B. Journal of Vacuum Science & Technology B, Vol. 40, Issue 2 https://doi.org/10.1116/6.0001681	journal	March 2022
Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching Fischer, Andreas; Routzahn, Aaron; Gasvoda, Ryan J. Journal of Vacuum Science & Technology A, Vol. 40, Issue 2 https://doi.org/10.1116/6.0001691	journal	February 2022
Absolute measurement of vacuum ultraviolet photon flux in an inductively coupled plasma using a Au thin film Du, Linfeng; Ruchhoeft, Paul; Economou, Demetre J. Journal of Vacuum Science & Technology B, Vol. 40, Issue 2 https://doi.org/10.1116/6.0001709	journal	March 2022
In-plasma photo-assisted etching of Si with chlorine aided by an external vacuum ultraviolet source Du, Linfeng; Economou, Demetre J.; Donnelly, Vincent M. Journal of Vacuum Science & Technology B, Vol. 40, Issue 2 https://doi.org/10.1116/6.0001710	journal	March 2022
Optimization of silicon etch rate in a CF4/Ar/O2 inductively coupled plasma Levko, Dmitry; Raja, Laxminarayan L. Journal of Vacuum Science & Technology B, Vol. 40, Issue 3 https://doi.org/10.1116/6.0001745	journal	April 2022
Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas Antoun, G.; Tillocher, T.; Girard, A. Journal of Vacuum Science & Technology A, Vol. 40, Issue 5 https://doi.org/10.1116/6.0001885	journal	August 2022
Molecular dynamics simulation of Si trench etching with SiO2 hard masks Mauchamp, Nicolas A.; Hamaguchi, Satoshi Journal of Vacuum Science & Technology A, Vol. 40, Issue 5 https://doi.org/10.1116/6.0002003	journal	August 2022
Molecular dynamics simulation of oxide-nitride bilayer etching with energetic fluorocarbon ions Cagomoc, Charisse Marie D.; Isobe, Michiro; Hudson, Eric A. Journal of Vacuum Science & Technology A, Vol. 40, Issue 6 https://doi.org/10.1116/6.0002182	journal	November 2022
Dry etching in the presence of physisorption of neutrals at lower temperatures Lill, Thorsten; Berry, Ivan L.; Shen, Meihua Journal of Vacuum Science & Technology A, Vol. 41, Issue 2 https://doi.org/10.1116/6.0002230	journal	February 2023
Electron beam-induced etching of SiO2, Si3N4, and poly-Si assisted by CF4/O2 remote plasma Lin, Kang-Yi; Preischl, Christian; Hermanns, Christian Felix Journal of Vacuum Science & Technology A, Vol. 41, Issue 1 https://doi.org/10.1116/6.0002234	journal	December 2022
Control of the ion flux and energy distribution of dual-frequency capacitive RF plasmas by the variation of the driving voltages Kim, Hwan Ho; Shin, Ji Hyun; Lee, Hae June Journal of Vacuum Science & Technology A, Vol. 41, Issue 2 https://doi.org/10.1116/6.0002242	journal	February 2023
Voltage waveform tailoring for high aspect ratio plasma etching of SiO2 using Ar/CF4/O2 mixtures: Consequences of ion and electron distributions on etch profiles Krüger, Florian; Lee, Hyunjae; Nam, Sang Ki Journal of Vacuum Science & Technology A, Vol. 41, Issue 1 https://doi.org/10.1116/6.0002290	journal	December 2022
Exploring the self-limiting atomic layer etching of AlGaN: A study of O2-BCl3 and chlorinate-argon systems Guan, Lulu; Li, Xingyu; Guo, Chunxiang Journal of Vacuum Science & Technology A, Vol. 41, Issue 4 https://doi.org/10.1116/6.0002647	journal	June 2023
Mechanism of residue formation on Ge-rich germanium antimony tellurium alloys after plasma etching Fontaine, Benjamin; Boixaderas, Christelle; Dubois, Jérôme Journal of Vacuum Science & Technology A, Vol. 41, Issue 5 https://doi.org/10.1116/6.0002751	journal	August 2023
Defect detection strategies and process partitioning for single-expose EUV patterning Meli, Luciana; Petrillo, Karen; De Silva, Anuja Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 18, Issue 01 https://doi.org/10.1117/1.JMM.18.1.011006	journal	September 2018
Investigating metal oxide resists for patterning 28-nm pitch structures using single exposure extreme ultraviolet: defectivity, electrical test, and voltage contrast study Sarkar, Sujan K.; Das, Sayantan; Carballo, Victor M. Blanco Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 21, Issue 04 https://doi.org/10.1117/1.JMM.21.4.044901	journal	October 2022
Modeling of plasma processing reactors: review and perspective Rauf, Shahid; Bera, Kallol; Kenney, Jason Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 22, Issue 04 https://doi.org/10.1117/1.JMM.22.4.041503	journal	November 2023
Review: Machine learning for advancing low-temperature plasma modeling and simulation Trieschmann, Jan; Vialetto, Luca; Gergs, Tobias Journal of Micro/Nanopatterning, Materials, and Metrology, Vol. 22, Issue 04 https://doi.org/10.1117/1.JMM.22.4.041504	journal	December 2023
STT MRAM patterning challenges Boullart, Werner; Radisic, Dunja; Paraschiv, Vasile SPIE Proceedings https://doi.org/10.1117/12.2013602	conference	March 2013
EUV patterning successes and frontiers Felix, Nelson; Corliss, Dan; Petrillo, Karen SPIE Advanced Lithography, SPIE Proceedings https://doi.org/10.1117/12.2219894	conference	March 2016
Reducing EUV mask 3D effects by alternative metal absorbers Philipsen, Vicky; Luong, Kim Vu; Souriau, Laurent SPIE Proceedings https://doi.org/10.1117/12.2257929	conference	March 2017
Update on optical material properties for alternative EUV mask absorber materials Laubis, Christian; Vu Luong, Kim; Philipsen, Vicky 33rd European Mask and Lithography Conference https://doi.org/10.1117/12.2279702	conference	September 2017
Line roughness improvements on EUV 36nm pitch pattern by plasma treatment method Wada, Toshiharu; Hsieh, Chia-Yun; Ko, Akiteru Advanced Etch Technology for Nanopatterning VIII https://doi.org/10.1117/12.2514764	conference	March 2019
Effect of surface temperature on GeSbTe damage formation during plasma processing Buzi, Luxherta; Papalia, John; Miyazoe, Hiroyuki Advanced Etch Technology and Process Integration for Nanopatterning X https://doi.org/10.1117/12.2581706	conference	March 2021
EUV resist curing technique for LWR reduction and etch selectivity enhancement Narishige, Kazuki; Katsunuma, Takayuki; Honda, Masanobu SPIE Proceedings https://doi.org/10.1117/12.916340	conference	March 2012
Patterning enhancement techniques by reactive ion etch Honda, Masanobu; Yatsuda, Koichi SPIE Proceedings https://doi.org/10.1117/12.920309	conference	March 2012
Numerical Simulation of Cryogenic Etching: Model with Delayed Desorption Rudenko, M. K.; Myakon’kikh, A. V.; Lukichev, V. F. Russian Microelectronics, Vol. 50, Issue 1 https://doi.org/10.1134/S106373972101008X	journal	January 2021
Photo-Excited Etching of Poly-Crystalline and Single-Crystalline Silicon in Cl₂Atmosphere Okano, Haruo; Horiike, Yasuhiro; Sekine, Makoto Japanese Journal of Applied Physics, Vol. 24, Issue Part 1, No. 1 https://doi.org/10.1143/JJAP.24.68	journal	January 1985
Single Silicon Etching Profile Simulation Arikado, Tsunetoshi; Horioka, Keiji; Sekine, Makoto Japanese Journal of Applied Physics, Vol. 27, Issue 1R https://doi.org/10.1143/JJAP.27.95	journal	January 1988
SiO₂ Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas Ohiwa, Tokuhisa; Horioka, Keiji; Arikado, Tsunetoshi Japanese Journal of Applied Physics, Vol. 31, Issue 2R https://doi.org/10.1143/JJAP.31.405	journal	February 1992
Realistic Etch Yield of Fluorocarbon Ions in SiO₂ Etch Process Hikosaka, Yukinobu; Sekine, HisatakaHayashi; Endo, HideoTsuboi Japanese Journal of Applied Physics, Vol. 38, Issue 7S https://doi.org/10.1143/JJAP.38.4465	journal	July 1999
Quantum Chemical Study on Decomposition and Polymer Deposition in Perfluorocarbon Plasmas: Molecular Orbital Calculations of Excited States of Perfluorocarbons Nakamura, Toshihiro; Motomura, Hideki; Tachibana, Kunihide Japanese Journal of Applied Physics, Vol. 40, Issue 2R https://doi.org/10.1143/JJAP.40.847	journal	February 2001
Dry Etching of SiO₂Thin Films with Perfluoropropenoxide–O₂and Perfluoropropene–O₂Plasmas Fracassi, Francesco; D'Agostino, Riccardo; Fornelli, Antonella Japanese Journal of Applied Physics, Vol. 41, Issue Part 1, No. 10 https://doi.org/10.1143/JJAP.41.6287	journal	October 2002
Comparative Studies of Perfluorocarbon Alternative Gas Plasmas for Contact Hole Etch Nakamura, Shingo; Itano, Mitsushi; Aoyama, Hirokazu Japanese Journal of Applied Physics, Vol. 42, Issue Part 1, No. 9A https://doi.org/10.1143/JJAP.42.5759	journal	September 2003
Investigation of Bowing Reduction in SiO₂ Etching Taking into Account Radical Sticking in a Hole Izawa, Masaru; Negishi, Nobuyuki; Yokogawa, Ken'etsu Japanese Journal of Applied Physics, Vol. 46, Issue 12R https://doi.org/10.1143/JJAP.46.7870	journal	December 2007
Developments of Plasma Etching Technology for Fabricating Semiconductor Devices Abe, Haruhiko; Yoneda, Masahiro; Fujiwara, Nobuo Japanese Journal of Applied Physics, Vol. 47, Issue 3 https://doi.org/10.1143/JJAP.47.1435	journal	March 2008
Effects of Mask and Necking Deformation on Bowing and Twisting in High-Aspect-Ratio Contact Hole Etching Miyake, Masatoshi; Negishi, Nobuyuki; Izawa, Masaru Japanese Journal of Applied Physics, Vol. 48, Issue 8 https://doi.org/10.1143/JJAP.48.08HE01	journal	August 2009
Chemical Processing of Materials on Silicon: More Functionality, Smaller Features, and Larger Wafers Marchack, Nathan; Chang, Jane P. Annual Review of Chemical and Biomolecular Engineering, Vol. 3, Issue 1 https://doi.org/10.1146/annurev-chembioeng-062011-080958	journal	July 2012
Damascene copper electroplating for chip interconnections Andricacos, P. C.; Uzoh, C.; Dukovic, J. O. IBM Journal of Research and Development, Vol. 42, Issue 5 https://doi.org/10.1147/rd.425.0567	journal	September 1998
Silicon CMOS devices beyond scaling Haensch, W.; Nowak, E. J.; Dennard, R. H. IBM Journal of Research and Development, Vol. 50, Issue 4.5 https://doi.org/10.1147/rd.504.0339	journal	July 2006
A Review of SiO[sub 2] Etching Studies in Inductively Coupled Fluorocarbon Plasmas Schaepkens, Marc; Oehrlein, Gottlieb S. Journal of The Electrochemical Society, Vol. 148, Issue 3 https://doi.org/10.1149/1.1348260	journal	January 2001
Application of Volatility Diagrams for Low Temperature, Dry Etching, and Planarization of Copper Kulkarni, Nagraj S.; DeHoff, Robert T. Journal of The Electrochemical Society, Vol. 149, Issue 11 https://doi.org/10.1149/1.1513986	journal	January 2002
The Possibility of Carbonyl Fluoride as a New CVD Chamber Cleaning Gas Mitsui, Yuki; Ohira, Yutaka; Yonemura, Taisuke Journal of The Electrochemical Society, Vol. 151, Issue 5 https://doi.org/10.1149/1.1669010	journal	January 2004
Inductively Coupled Plasma Etching of Bulk Titanium for MEMS Applications Parker, E. R.; Thibeault, B. J.; Aimi, M. F. Journal of The Electrochemical Society, Vol. 152, Issue 10 https://doi.org/10.1149/1.2006647	journal	January 2005
Principal Component Analysis of Optical Emission Spectroscopy and Mass Spectrometry: Application to Reactive Ion Etch Process Parameter Estimation Using Neural Networks Shadmehr, Reza; Angell, David; Chou, Paul B. Journal of The Electrochemical Society, Vol. 139, Issue 3 https://doi.org/10.1149/1.2069323	journal	March 1992
Tungsten Etching in CF 4 and SF 6 Discharges Tang, C. C.; Hess, D. W. Journal of The Electrochemical Society, Vol. 131, Issue 1 https://doi.org/10.1149/1.2115489	journal	January 1984
Two Cryogenic Processes Involving SF[sub 6], O[sub 2], and SiF[sub 4] for Silicon Deep Etching Tillocher, T.; Dussart, R.; Overzet, L. J. Journal of The Electrochemical Society, Vol. 155, Issue 3 https://doi.org/10.1149/1.2826280	journal	January 2008
Subtractive Etching of Cu with Hydrogen-Based Plasmas Wu, Fangyu; Levitin, Galit; Hess, Dennis ECS Transactions, Vol. 33, Issue 12 https://doi.org/10.1149/1.3501042	journal	October 2010
Etching of CoFeB Using CO∕NH[sub 3] in an Inductively Coupled Plasma Etching System Park, Jong-Yoon; Kang, Se-Koo; Jeon, Min-Hwan Journal of The Electrochemical Society, Vol. 158, Issue 1 https://doi.org/10.1149/1.3505295	journal	January 2011
Low Damage Cryogenic Etching of Porous Organosilicate Low-k Materials Using SF₆/O₂/SiF₄ Zhang, Liping; Ljazouli, Rami; Lefaucheux, Philippe ECS Journal of Solid State Science and Technology, Vol. 2, Issue 6 https://doi.org/10.1149/2.001306jss	journal	January 2013
Atomic Layer Etching: An Industry Perspective T. Carver, Colin; J. Plombon, John; E. Romero, Patricio ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6 https://doi.org/10.1149/2.0021506jss	journal	January 2015
Highly Selective Directional Atomic Layer Etching of Silicon Tan, Samantha; Yang, Wenbing; Kanarik, Keren J. ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6 https://doi.org/10.1149/2.0031506jss	journal	January 2015
Atomic Layer Etching of HfO ₂ Using Sequential, Self-Limiting Thermal Reactions with Sn(acac) ₂ and HF Lee, Younghee; DuMont, Jaime W.; George, Steven M. ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6 https://doi.org/10.1149/2.0041506jss	journal	January 2015
Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition? Faraz, T.; Roozeboom, F.; Knoops, H. C. M. ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6 https://doi.org/10.1149/2.0051506jss	journal	January 2015
Atomic Layer Etching at the Tipping Point: An Overview Oehrlein, G. S.; Metzler, D.; Li, C. ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6 https://doi.org/10.1149/2.0061506jss	journal	January 2015
Electron Beam Generated Plasmas for Ultra Low T _e Processing Walton, S. G.; Boris, D. R.; Hernández, S. C. ECS Journal of Solid State Science and Technology, Vol. 4, Issue 6 https://doi.org/10.1149/2.0071506jss	journal	January 2015
Inductively Coupled Plasma Reactive Ion Etching of Magnetic Tunnel Junction Stacks in a CH3COOH/Ar Gas Garay, A. A.; Choi, J. H.; Hwang, S. M. ECS Solid State Letters, Vol. 4, Issue 10 https://doi.org/10.1149/2.0071510ssl	journal	August 2015
Etch Characteristics of Low-K Materials Using CF₃I/C₄F₈/Ar/O₂ Inductively Coupled Plasmas Hong, Jong Woo; Tak, Hyun Woo; Choi, Young Hun Science of Advanced Materials, Vol. 14, Issue 7 https://doi.org/10.1166/sam.2022.4312	journal	July 2022
Modeling of the plasma chemistry and plasma–surface interactions in reactive plasmas Bogaerts, Annemie; De Bie, Christophe; Eckert, Maxie Pure and Applied Chemistry, Vol. 82, Issue 6 https://doi.org/10.1351/PAC-CON-09-09-20	journal	April 2010
Beyond 10 μm Depth Ultra-High Speed Etch Process with 84% Lower Carbon Footprint for Memory Channel Hole of 3D NAND Flash over 400 Layers Kihara, Yoshihide; Tomura, Maju; Sakamoto, Wataru 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185160	conference	June 2023
Assembly and Curation of Lists of Per- and Polyfluoroalkyl Substances (PFAS) to Support Environmental Science Research Williams, Antony J.; Gaines, Linda G. T.; Grulke, Christopher M. Frontiers in Environmental Science, Vol. 10 https://doi.org/10.3389/fenvs.2022.850019	journal	April 2022
An Approach to Reduce Greenhouse Gases in the Semiconductor Industry Using F2 Dissociated in Plasma for CVD Chamber Cleaning Boudaden, Jamila; Altmannshofer, Stephan; Wieland, Robert Applied Sciences, Vol. 8, Issue 6 https://doi.org/10.3390/app8060846	journal	May 2018
Data Needs for Modeling Low-Temperature Non-Equilibrium Plasmas: The LXCat Project, History, Perspectives and a Tutorial Carbone, Emile; Graef, Wouter; Hagelaar, Gerjan Atoms, Vol. 9, Issue 1 https://doi.org/10.3390/atoms9010016	journal	February 2021
Exploring Topological Semi-Metals for Interconnects Kundu, Satwik; Roy, Rupshali; Rahman, M. Saifur Journal of Low Power Electronics and Applications, Vol. 13, Issue 1 https://doi.org/10.3390/jlpea13010016	journal	February 2023
Development of Virtual Metrology Using Plasma Information Variables to Predict Si Etch Profile Processed by SF6/O2/Ar Capacitively Coupled Plasma Kwon, Ji-Won; Ryu, Sangwon; Park, Jihoon Materials, Vol. 14, Issue 11 https://doi.org/10.3390/ma14113005	journal	June 2021
Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma Sung, Dain; Wen, Long; Tak, Hyunwoo Materials, Vol. 15, Issue 4 https://doi.org/10.3390/ma15041300	journal	February 2022
Contribution of Ion Energy and Flux on High-Aspect Ratio SiO2 Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C4F8 Plasma: Individual Ion Energy and Flux Controlled Jeong, Wonnyoung; Kim, Sijun; Lee, Youngseok Materials, Vol. 16, Issue 10 https://doi.org/10.3390/ma16103820	journal	May 2023
Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction Choi, Minsu; Lee, Youngseok; You, Yebin Materials, Vol. 16, Issue 16 https://doi.org/10.3390/ma16165624	journal	August 2023
High Sensitivity Resists for EUV Lithography: A Review of Material Design Strategies and Performance Results Manouras, Theodore; Argitis, Panagiotis Nanomaterials, Vol. 10, Issue 8 https://doi.org/10.3390/nano10081593	journal	August 2020
Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects Tsai, Yuanlu; Li, Zhiteng; Hu, Shaojie Nanomaterials, Vol. 12, Issue 4 https://doi.org/10.3390/nano12040661	journal	February 2022
On the Vertically Stacked Gate-All-Around Nanosheet and Nanowire Transistor Scaling beyond the 5 nm Technology Node Wong, Hei; Kakushima, Kuniyuki Nanomaterials, Vol. 12, Issue 10 https://doi.org/10.3390/nano12101739	journal	May 2022
Life-Cycle Assessment of Refrigerants for Air Conditioners Considering Reclamation and Destruction Yasaka, Yoshihito; Karkour, Selim; Shobatake, Koichi Sustainability, Vol. 15, Issue 1 https://doi.org/10.3390/su15010473	journal	December 2022
The EU’s Per- and Polyfluoroalkyl Substances (PFAS) Ban: A Case of Policy over Science Spyrakis, Francesca; Dragani, Tommaso A. Toxics, Vol. 11, Issue 9 https://doi.org/10.3390/toxics11090721	journal	August 2023
Self-limiting processes in thermal atomic layer etching of nickel by hexafluoroacetylacetone Basher, Abdulrahman H.; Hamada, Ikutaro; Hamaguchi, Satoshi Japanese Journal of Applied Physics, Vol. 59, Issue 9 https://doi.org/10.35848/1347-4065/aba9a7	journal	August 2020
Novel technology of high-aspect-ratio etch utilizing coverage-controllable atomic layer deposition Kumakura, Sho; Sasagawa, Hironari; Nishizuka, Tetsuya Japanese Journal of Applied Physics, Vol. 61, Issue SI https://doi.org/10.35848/1347-4065/ac647e	journal	June 2022
Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies Kambara, Makoto; Kawaguchi, Satoru; Lee, Hae June Japanese Journal of Applied Physics, Vol. 62, Issue SA https://doi.org/10.35848/1347-4065/ac9189	journal	November 2022
Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method Kuboi, Nobuyuki; Matsugai, Hiroyasu; Tatsumi, Tetsuya Japanese Journal of Applied Physics, Vol. 62, Issue SI https://doi.org/10.35848/1347-4065/acbebb	journal	March 2023
Progress report on high aspect ratio patterning for memory devices Shen, Meihua; Lill, Thorsten; Hoang, John Japanese Journal of Applied Physics, Vol. 62, Issue SI https://doi.org/10.35848/1347-4065/accbc7	journal	May 2023
Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications Le, Dan N.; Park, Taehee; Hwang, Su Min Japanese Journal of Applied Physics, Vol. 62, Issue SG https://doi.org/10.35848/1347-4065/acce43	journal	June 2023
Comparison of distributions of etching rate and calculated plasma parameters in dual-frequency capacitively coupled plasma Takagi, Shigeyuki; Ishii, Kazumichi; Hsiao, Shih-Nan Japanese Journal of Applied Physics, Vol. 62, Issue SN https://doi.org/10.35848/1347-4065/acec56	journal	August 2023
Anisotropic/Isotropic Atomic Layer Etching of Metals Kim, Doo San; Kim, Ju Eun; Gill, You Jung Applied Science and Convergence Technology, Vol. 29, Issue 3 https://doi.org/10.5757/ASCT.2020.29.3.041	journal	May 2020
Narrow free-standing features fabricated by top-down self-limited trimming of organic materials using precisely temperature-controlled plasma etching system Fukunaga, Yusuke; Tsutsumi, Takayoshi; Kondo, Hiroki Japanese Journal of Applied Physics, Vol. 58, Issue 2 https://doi.org/10.7567/1347-4065/aaf92a	journal	January 2019
Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development Iwase, Taku; Kamaji, Yoshito; Kang, Song Yun Japanese Journal of Applied Physics, Vol. 58, Issue SE https://doi.org/10.7567/1347-4065/ab163b	journal	May 2019
Formation mechanism of sidewall striation in high-aspect-ratio hole etching Omura, Mitsuhiro; Hashimoto, Junichi; Adachi, Takahiro Japanese Journal of Applied Physics, Vol. 58, Issue SE https://doi.org/10.7567/1347-4065/ab163c	journal	May 2019
Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective Ishikawa, Kenji; Ishijima, Tatsuo; Shirafuji, Tatsuru Japanese Journal of Applied Physics, Vol. 58, Issue SE https://doi.org/10.7567/1347-4065/ab163e	journal	May 2019
Impact of CoFeB surface roughness on reliability of MgO films in CoFeB/MgO/CoFeB magnetic tunnel junction Park, Hyeonwoo; Teramoto, Akinobu; Tsuchimoto, Jun-Ichi Japanese Journal of Applied Physics, Vol. 58, Issue SI https://doi.org/10.7567/1347-4065/ab1bd2	journal	July 2019
Multiscale plasma and feature profile simulations of plasma-enhanced chemical vapor deposition and atomic layer deposition processes for titanium thin film fabrication Denpoh, Kazuki; Moroz, Paul; Kato, Taiki Japanese Journal of Applied Physics, Vol. 59, Issue SH https://doi.org/10.7567/1347-4065/ab5bc9	journal	February 2020
Wavelength Dependence of Photon-Induced Interface Defects in Hydrogenated Silicon Nitride/Si Structure during Plasma Etching Processes Fukasawa, Masanaga; Matsugai, Hiroyasu; Honda, Takahiro Japanese Journal of Applied Physics, Vol. 52, Issue 5S2 https://doi.org/10.7567/JJAP.52.05ED01	journal	May 2013
In-situ detection method for wafer movement and micro-arc discharge around a wafer in plasma etching process using electrostatic chuck wafer stage with built-in acoustic emission sensor Kasashima, Yuji; Tabaru, Tatsuo; Yasaka, Mitsuo Japanese Journal of Applied Physics, Vol. 53, Issue 3S2 https://doi.org/10.7567/JJAP.53.03DC04	journal	January 2014
Defect generation in electronic devices under plasma exposure: Plasma-induced damage Eriguchi, Koji Japanese Journal of Applied Physics, Vol. 56, Issue 6S2 https://doi.org/10.7567/JJAP.56.06HA01	journal	May 2017
Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions? Ishikawa, Kenji; Karahashi, Kazuhiro; Ichiki, Takanori Japanese Journal of Applied Physics, Vol. 56, Issue 6S2 https://doi.org/10.7567/JJAP.56.06HA02	journal	June 2017
Atomic layer etching of GaN and AlGaN using directional plasma-enhanced approach Ohba, Tomihito; Yang, Wenbing; Tan, Samantha Japanese Journal of Applied Physics, Vol. 56, Issue 6S2 https://doi.org/10.7567/JJAP.56.06HB06	journal	May 2017
Electron behaviors in afterglow of synchronized dc-imposed pulsed fluorocarbon-based plasmas Ueyama, Toshinari; Fukunaga, Yusuke; Tsutsumi, Takayoshi Japanese Journal of Applied Physics, Vol. 56, Issue 6S2 https://doi.org/10.7567/JJAP.56.06HC03	journal	May 2017
Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom? Ishikawa, Kenji; Karahashi, Kazuhiro; Ishijima, Tatsuo Japanese Journal of Applied Physics, Vol. 57, Issue 6S2 https://doi.org/10.7567/JJAP.57.06JA01	journal	May 2018
Cooperative simulation of lithography and topography for three-dimensional high-aspect-ratio etching Ichikawa, Takashi; Yagisawa, Takashi; Furukawa, Shinichi Japanese Journal of Applied Physics, Vol. 57, Issue 6S2 https://doi.org/10.7567/JJAP.57.06JC01	journal	April 2018
Effect of substrate temperature on sidewall erosion in high-aspect-ratio Si hole etching employing HBr/SF₆/O₂ plasma Sakai, Itsuko; Yahashi, Katsunori; Shimonishi, Satoshi Japanese Journal of Applied Physics, Vol. 57, Issue 9 https://doi.org/10.7567/JJAP.57.098004	journal	August 2018

Similar Records

Science challenges and research opportunities for plasma applications in microelectronics

Journal Article · Mon Jun 03 00:00:00 EDT 2024 · Journal of Vacuum Science and Technology B · OSTI ID:2349231

Future of plasma etching for microelectronics: Challenges and opportunities

Citation Formats

References (341)

Similar Records

Related Subjects